GaAs Taper Etching By Mixture Gas Reactive Ion Etching System

Makoto Hirano

研究成果: Article › 査読

本文言語	English
ページ（範囲）	L2136-L2138.
ジャーナル	Japanese Journal of Applied Physics
巻	30
出版ステータス	Published - 1991 9月 1

引用スタイル

@article{e15e2f8f0cb04f3bbf0a1e9f54889da0,

title = "GaAs Taper Etching By Mixture Gas Reactive Ion Etching System",

author = "Makoto Hirano",

year = "1991",

month = sep,

day = "1",

language = "English",

volume = "30",

pages = "L2136--L2138.",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

}