Gain-bandwidth limitations of 0.18μm Si-CMOS RF technology

B. Siddik Yarman, Nicodimus Retdian, Shigetaga Takagi, Nobuo Fujii

研究成果: Conference contribution

4 引用 (Scopus)

抜粋

In this paper, gain bandwidth limitations of a regularly processed 0.18μm Si CMOS FET is investigated over the frequency band of 450MHz-10GHz. It is exhibited that 0.18μm Si CMOS processing technology can safely be utilized to manufacture Ultra Wideband RF-Amplifiers for commercial wireless communication systems placed silicon chips up to X-Band.

元の言語English
ホスト出版物のタイトルEuropean Conference on Circuit Theory and Design 2007, ECCTD 2007
出版者IEEE Computer Society
ページ264-267
ページ数4
ISBN(印刷物)1424413427, 9781424413423
DOI
出版物ステータスPublished - 2007 1 1
イベントEuropean Conference on Circuit Theory and Design 2007, ECCTD 2007 - Seville, Spain
継続期間: 2007 8 262007 8 30

出版物シリーズ

名前European Conference on Circuit Theory and Design 2007, ECCTD 2007

Other

OtherEuropean Conference on Circuit Theory and Design 2007, ECCTD 2007
Spain
Seville
期間07/8/2607/8/30

ASJC Scopus subject areas

  • Computational Theory and Mathematics
  • Electrical and Electronic Engineering

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  • これを引用

    Yarman, B. S., Retdian, N., Takagi, S., & Fujii, N. (2007). Gain-bandwidth limitations of 0.18μm Si-CMOS RF technology. : European Conference on Circuit Theory and Design 2007, ECCTD 2007 (pp. 264-267). [4529587] (European Conference on Circuit Theory and Design 2007, ECCTD 2007). IEEE Computer Society. https://doi.org/10.1109/ECCTD.2007.4529587