Gain-bandwidth limitations of 0.18μm Si-CMOS RF technology

B. Siddik Yarman, Nicodimus Retdian, Shigetaga Takagi, Nobuo Fujii

研究成果: Conference contribution

4 被引用数 (Scopus)

抄録

In this paper, gain bandwidth limitations of a regularly processed 0.18μm Si CMOS FET is investigated over the frequency band of 450MHz-10GHz. It is exhibited that 0.18μm Si CMOS processing technology can safely be utilized to manufacture Ultra Wideband RF-Amplifiers for commercial wireless communication systems placed silicon chips up to X-Band.

本文言語English
ホスト出版物のタイトルEuropean Conference on Circuit Theory and Design 2007, ECCTD 2007
出版社IEEE Computer Society
ページ264-267
ページ数4
ISBN(印刷版)1424413427, 9781424413423
DOI
出版ステータスPublished - 2007 1 1
外部発表はい
イベントEuropean Conference on Circuit Theory and Design 2007, ECCTD 2007 - Seville, Spain
継続期間: 2007 8 262007 8 30

出版物シリーズ

名前European Conference on Circuit Theory and Design 2007, ECCTD 2007

Other

OtherEuropean Conference on Circuit Theory and Design 2007, ECCTD 2007
CountrySpain
CitySeville
Period07/8/2607/8/30

ASJC Scopus subject areas

  • Computational Theory and Mathematics
  • Electrical and Electronic Engineering

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