Gain-bandwidth limitations of 0.18μm Si-CMOS RF technology

B. Siddik Yarman, Retdian Nicodimus, Shigetaga Takagi, Nobuo Fujii

研究成果: Conference contribution

3 引用 (Scopus)

抄録

In this paper, gain bandwidth limitations of a regularly processed 0.18μm Si CMOS FET is investigated over the frequency band of 450MHz-10GHz. It is exhibited that 0.18μm Si CMOS processing technology can safely be utilized to manufacture Ultra Wideband RF-Amplifiers for commercial wireless communication systems placed silicon chips up to X-Band.

元の言語English
ホスト出版物のタイトルEuropean Conference on Circuit Theory and Design 2007, ECCTD 2007
ページ264-267
ページ数4
DOI
出版物ステータスPublished - 2008
外部発表Yes
イベントEuropean Conference on Circuit Theory and Design 2007, ECCTD 2007 - Seville, Spain
継続期間: 2007 8 262007 8 30

Other

OtherEuropean Conference on Circuit Theory and Design 2007, ECCTD 2007
Spain
Seville
期間07/8/2607/8/30

Fingerprint

Field effect transistors
Ultra-wideband (UWB)
Frequency bands
Communication systems
Bandwidth
Silicon
Processing

ASJC Scopus subject areas

  • Computational Theory and Mathematics
  • Electrical and Electronic Engineering

これを引用

Yarman, B. S., Nicodimus, R., Takagi, S., & Fujii, N. (2008). Gain-bandwidth limitations of 0.18μm Si-CMOS RF technology. : European Conference on Circuit Theory and Design 2007, ECCTD 2007 (pp. 264-267). [4529587] https://doi.org/10.1109/ECCTD.2007.4529587

Gain-bandwidth limitations of 0.18μm Si-CMOS RF technology. / Yarman, B. Siddik; Nicodimus, Retdian; Takagi, Shigetaga; Fujii, Nobuo.

European Conference on Circuit Theory and Design 2007, ECCTD 2007. 2008. p. 264-267 4529587.

研究成果: Conference contribution

Yarman, BS, Nicodimus, R, Takagi, S & Fujii, N 2008, Gain-bandwidth limitations of 0.18μm Si-CMOS RF technology. : European Conference on Circuit Theory and Design 2007, ECCTD 2007., 4529587, pp. 264-267, European Conference on Circuit Theory and Design 2007, ECCTD 2007, Seville, Spain, 07/8/26. https://doi.org/10.1109/ECCTD.2007.4529587
Yarman BS, Nicodimus R, Takagi S, Fujii N. Gain-bandwidth limitations of 0.18μm Si-CMOS RF technology. : European Conference on Circuit Theory and Design 2007, ECCTD 2007. 2008. p. 264-267. 4529587 https://doi.org/10.1109/ECCTD.2007.4529587
Yarman, B. Siddik ; Nicodimus, Retdian ; Takagi, Shigetaga ; Fujii, Nobuo. / Gain-bandwidth limitations of 0.18μm Si-CMOS RF technology. European Conference on Circuit Theory and Design 2007, ECCTD 2007. 2008. pp. 264-267
@inproceedings{8b009d82ed204786aae4017462b54a95,
title = "Gain-bandwidth limitations of 0.18μm Si-CMOS RF technology",
abstract = "In this paper, gain bandwidth limitations of a regularly processed 0.18μm Si CMOS FET is investigated over the frequency band of 450MHz-10GHz. It is exhibited that 0.18μm Si CMOS processing technology can safely be utilized to manufacture Ultra Wideband RF-Amplifiers for commercial wireless communication systems placed silicon chips up to X-Band.",
author = "Yarman, {B. Siddik} and Retdian Nicodimus and Shigetaga Takagi and Nobuo Fujii",
year = "2008",
doi = "10.1109/ECCTD.2007.4529587",
language = "English",
isbn = "1424413427",
pages = "264--267",
booktitle = "European Conference on Circuit Theory and Design 2007, ECCTD 2007",

}

TY - GEN

T1 - Gain-bandwidth limitations of 0.18μm Si-CMOS RF technology

AU - Yarman, B. Siddik

AU - Nicodimus, Retdian

AU - Takagi, Shigetaga

AU - Fujii, Nobuo

PY - 2008

Y1 - 2008

N2 - In this paper, gain bandwidth limitations of a regularly processed 0.18μm Si CMOS FET is investigated over the frequency band of 450MHz-10GHz. It is exhibited that 0.18μm Si CMOS processing technology can safely be utilized to manufacture Ultra Wideband RF-Amplifiers for commercial wireless communication systems placed silicon chips up to X-Band.

AB - In this paper, gain bandwidth limitations of a regularly processed 0.18μm Si CMOS FET is investigated over the frequency band of 450MHz-10GHz. It is exhibited that 0.18μm Si CMOS processing technology can safely be utilized to manufacture Ultra Wideband RF-Amplifiers for commercial wireless communication systems placed silicon chips up to X-Band.

UR - http://www.scopus.com/inward/record.url?scp=49749146715&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=49749146715&partnerID=8YFLogxK

U2 - 10.1109/ECCTD.2007.4529587

DO - 10.1109/ECCTD.2007.4529587

M3 - Conference contribution

AN - SCOPUS:49749146715

SN - 1424413427

SN - 9781424413423

SP - 264

EP - 267

BT - European Conference on Circuit Theory and Design 2007, ECCTD 2007

ER -