GaInN light emitting diodes with AlInN/GaN distributed Bragg reflector on Si

H. Ishikawa, T. Jimbo, T. Egawa

研究成果: Conference article査読

24 被引用数 (Scopus)

抄録

We report the effect of inserting a lattice-matched AlInN/GaN distributed Bragg reflector (DBR) on the performance of GaInN light emitting diodes (LEDs) on Si substrates. The lattice-matched AlInN/GaN DBR is superior to the previously used AlGaN/AlN DBR with respect to the suppression of cracking and the interface smooth ness. The light output power (PEL) of the LED increases with increasing number of pairs in the DBR and agrees well with the calculated one. The PEL of the 14.5-pair AlInN/GaN DBR LED is about 3.6-fold higher than that of the non-DBR LED.

本文言語English
ページ(範囲)2086-2088
ページ数3
ジャーナルPhysica Status Solidi (C) Current Topics in Solid State Physics
5
6
DOI
出版ステータスPublished - 2008 12 1
外部発表はい
イベント7th International Conference of Nitride Semiconductors, ICNS-7 - Las Vegas, NV, United States
継続期間: 2007 9 162007 9 21

ASJC Scopus subject areas

  • Condensed Matter Physics

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