TY - JOUR
T1 - GaInN light emitting diodes with AlInN/GaN distributed Bragg reflector on Si
AU - Ishikawa, H.
AU - Jimbo, T.
AU - Egawa, T.
PY - 2008
Y1 - 2008
N2 - We report the effect of inserting a lattice-matched AlInN/GaN distributed Bragg reflector (DBR) on the performance of GaInN light emitting diodes (LEDs) on Si substrates. The lattice-matched AlInN/GaN DBR is superior to the previously used AlGaN/AlN DBR with respect to the suppression of cracking and the interface smooth ness. The light output power (PEL) of the LED increases with increasing number of pairs in the DBR and agrees well with the calculated one. The PEL of the 14.5-pair AlInN/GaN DBR LED is about 3.6-fold higher than that of the non-DBR LED.
AB - We report the effect of inserting a lattice-matched AlInN/GaN distributed Bragg reflector (DBR) on the performance of GaInN light emitting diodes (LEDs) on Si substrates. The lattice-matched AlInN/GaN DBR is superior to the previously used AlGaN/AlN DBR with respect to the suppression of cracking and the interface smooth ness. The light output power (PEL) of the LED increases with increasing number of pairs in the DBR and agrees well with the calculated one. The PEL of the 14.5-pair AlInN/GaN DBR LED is about 3.6-fold higher than that of the non-DBR LED.
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U2 - 10.1002/pssc.200778441
DO - 10.1002/pssc.200778441
M3 - Conference article
AN - SCOPUS:77951222991
VL - 5
SP - 2086
EP - 2088
JO - Physica Status Solidi C: Conferences
JF - Physica Status Solidi C: Conferences
SN - 1862-6351
IS - 6
T2 - 7th International Conference of Nitride Semiconductors, ICNS-7
Y2 - 16 September 2007 through 21 September 2007
ER -