GaInNaS intermediate layer for improvement of lasing characteristics of GaInNaS quantum well lasers

Masao Kawaguchi, Tomoyuki Miyamoto, Atsushi Saitoh, Fumio Koyama

研究成果: Article査読

1 被引用数 (Scopus)

抄録

We report on GaInNAs intermediate layer (IML) structures for improving the lasing characteristics of GaInNAs quantum well (QW) lasers. Either lattice-matched or strained (∼0.65%) GaInNAs IMLs were inserted at GaInNAs/GaAs interfaces. The elongation of the emission wavelength of IML QW structure was observed while maintaining the photoluminescence (PL) emission efficiency in comparison with that of the GaAs barrier QW structure. The elongation of the lasing wavelength of GaInNAs QW lasers without a threshold penalty was also demonstrated by employing a GaInNAs IML. The IML QW exhibited a reduction in the amount of the wavelength blue shift due to postgrowth thermal annealing.

本文言語English
ページ(範囲)L453-L455
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
43
4 A
DOI
出版ステータスPublished - 2004 4月 1
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(その他)
  • 物理学および天文学(全般)

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