GaN-based optoelectronic devices on sapphire and Si substrates

Masayoshi Umeno, Takashi Egawa, Hiroyasu Ishikawa

研究成果: Article査読

33 被引用数 (Scopus)

抄録

A recessed gate AlGaN/GaN high-electron mobility transistor (HEMT) on sapphire (0 0 0 1), a GaN metal-semiconductor field-effect transistor (MESFET) and an InGaN multiple-quantum well green light-emitting diode (LED) on Si (1 1 1) substrates have been grown by metalorganic chemical vapor deposition. The AlGaN/GaN intermediate layers have been used for the growth of GaN MESFET and LED on Si substrates. A two-dimensional electron gas mobility as high as 9260 cm2/Vs with a sheet carrier density of 4.8×1012cm-2 was measured at 4.6 K for the AlGaN/GaN heterostructure on the sapphire substrate. The recessed gate device on sapphire showed a maximum extrinsic transconductance of 146 mS/mm and a drain-source current of 900 mA/mm for the AlGaN/GaN HEMT with a gate length of 2.1 μm at 25°C. The GaN MESFET on Si showed a maximum extrinsic transconductance of 25 mS/mm and a drain-source current of 169 mA/mm with a complete pinch-off for the 2.5-μm-gate length. The LED on Si exhibited an operating voltage of 18 V, a series resistance of 300Ω, an optical output power of 10 μW and a peak emission wavelength of 505 nm with a full-width at half-maximum of 33 nm at 20 mA drive current.

本文言語English
ページ(範囲)459-466
ページ数8
ジャーナルMaterials Science in Semiconductor Processing
4
6
DOI
出版ステータスPublished - 2001 12 1
外部発表はい

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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