GaN MESFETs on (111) Si substrate grown by MOCVD

T. Egawa, N. Nakada, H. Ishikawa, M. Umeno

研究成果: Article査読

40 被引用数 (Scopus)

抄録

A GaN metal-semiconductor field-effect transistor (MESFET) has been grown on (111) Si substrate by metalorganic chemical vapour deposition using Al0.27Ga0.73N/AlN intermediate layers. The device showed a maximum extrinsic transconductance 25 mS/mm and a drain-source current 169 mA/mm with a complete pinch-off for the 2.5 μm gate-length. The Al0.27Ga0.73N/AlN intermediate layers were effective in obtaining a mirror-like surface morphology and a high-resistive undoped GaN layer beneath a channel layer. The GaN MESFET on Si also exhibited no self-heating effects (drain-source current reduction) under high-power conditions, which results from the better thermal properties of Si than those of sapphire.

本文言語English
ページ(範囲)1816-1818
ページ数3
ジャーナルElectronics Letters
36
21
DOI
出版ステータスPublished - 2000 10月 12
外部発表はい

ASJC Scopus subject areas

  • 電子工学および電気工学

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