GaN metal-semiconductor-metal UV photodetector with recessed electrodes

Hao Jiang, Akihiro Okui, Hiroyasu Ishikawa, Chun Lin Shao, Takashi Egawa, Takashi Jimbo

研究成果: Article

5 引用 (Scopus)

抄録

GaN-based metal-semiconductor-metal photodetectors (MSM-PDs) with a recessed-electrode structure have been fabricated and characterized. The photodiodes exhibited low leakage currents with a typical value of 51 pA at 10 V. Spectral response revealed a responsivity up to 0.14 A/W at 350 nm under 10 V bias, corresponding to an internal quantum efficiency of about 90%, which is a 55.6% improvement over that of conventional MSM-PDs with planar electrodes. The improvement was attributed to the enhanced and uniform electric field due to the recessed electrodes in the photoactive region, leading to a more efficient carrier collection.

元の言語English
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
41
発行部数1 A/B
出版物ステータスPublished - 2002 1 15
外部発表Yes

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Photodetectors
photometers
Semiconductor materials
Electrodes
electrodes
Metals
metals
Photodiodes
Quantum efficiency
spectral sensitivity
Leakage currents
photodiodes
quantum efficiency
leakage
Electric fields
electric fields

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

これを引用

GaN metal-semiconductor-metal UV photodetector with recessed electrodes. / Jiang, Hao; Okui, Akihiro; Ishikawa, Hiroyasu; Shao, Chun Lin; Egawa, Takashi; Jimbo, Takashi.

:: Japanese Journal of Applied Physics, Part 2: Letters, 巻 41, 番号 1 A/B, 15.01.2002.

研究成果: Article

Jiang, Hao ; Okui, Akihiro ; Ishikawa, Hiroyasu ; Shao, Chun Lin ; Egawa, Takashi ; Jimbo, Takashi. / GaN metal-semiconductor-metal UV photodetector with recessed electrodes. :: Japanese Journal of Applied Physics, Part 2: Letters. 2002 ; 巻 41, 番号 1 A/B.
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AU - Egawa, Takashi

AU - Jimbo, Takashi

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