GaN metal-semiconductor-metal UV photodetector with recessed electrodes

Hao Jiang, Akihiro Okui, Hiroyasu Ishikawa, Chun Lin Shao, Takashi Egawa, Takashi Jimbo

研究成果: Article査読

6 被引用数 (Scopus)

抄録

GaN-based metal-semiconductor-metal photodetectors (MSM-PDs) with a recessed-electrode structure have been fabricated and characterized. The photodiodes exhibited low leakage currents with a typical value of 51 pA at 10 V. Spectral response revealed a responsivity up to 0.14 A/W at 350 nm under 10 V bias, corresponding to an internal quantum efficiency of about 90%, which is a 55.6% improvement over that of conventional MSM-PDs with planar electrodes. The improvement was attributed to the enhanced and uniform electric field due to the recessed electrodes in the photoactive region, leading to a more efficient carrier collection.

本文言語English
ページ(範囲)L34-L36
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
41
1 A/B
DOI
出版ステータスPublished - 2002 1月 15
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(その他)
  • 物理学および天文学(全般)

フィンガープリント

「GaN metal-semiconductor-metal UV photodetector with recessed electrodes」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル