GaN metal-semiconductor-metal UV photodetector with recessed electrodes

Hao Jiang, Akihiro Okui, Hiroyasu Ishikawa, Chun Lin Shao, Takashi Egawa, Takashi Jimbo

研究成果: Article

5 引用 (Scopus)

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GaN-based metal-semiconductor-metal photodetectors (MSM-PDs) with a recessed-electrode structure have been fabricated and characterized. The photodiodes exhibited low leakage currents with a typical value of 51 pA at 10 V. Spectral response revealed a responsivity up to 0.14 A/W at 350 nm under 10 V bias, corresponding to an internal quantum efficiency of about 90%, which is a 55.6% improvement over that of conventional MSM-PDs with planar electrodes. The improvement was attributed to the enhanced and uniform electric field due to the recessed electrodes in the photoactive region, leading to a more efficient carrier collection.

元の言語English
ページ(範囲)L34-L36
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
41
発行部数1 A/B
出版物ステータスPublished - 2002 1 15

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ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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