GaN on Si Substrate with AlGaN/AlN Intermediate Layer

Hiroyasu Ishikawa, Guang Yuan Zhao, Naoyuki Nakada, Takashi Egawa, Takashi Jimbo, Masayoshi Umeno

研究成果: Article査読

196 被引用数 (Scopus)

抄録

A single crystal GaN thin film was successfully grown on a Si (111) substrate by means of atmospheric pressure metalorganic chemical vapor deposition. Though there is a large difference in thermal expansion coefficients between GaN and Si, an intermediate layer consisting of AlN and AlGaN improved the quality of GaN on Si and reduced meitback etching during growth. Pits and cracks were not observed on the substrate and a mirror-like surface was obtained. The full-width at half maximum (FWHM) of the double-crystal X-ray rocking curve for GaN(0004) was 600 arcsec. Photoluminescence measurement at room temperature for a Si-doped film revealed a sharp band-edge emission with a FWHM of 62.5 meV, which is the narrowest value reported to date.

本文言語English
ページ(範囲)492-494
ページ数3
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
38
5 PART 2
出版ステータスPublished - 1999 5 1
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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