Generation and recombination of defects in vitreous silica induced by irradiation with a near-infrared femtosecond laser

Hong Bo Sun, Saulius Juodkazis, Mitsuru Watanabe, Shigeki Matsuo, Hiroaki Misawa, Junji Nishii

研究成果: Article

87 引用 (Scopus)

抄録

Properties of defects induced by irradiation with a near-infrared femtosecond laser beam into vitreous silica are reported. Three photoluminescence bands with photon energy of 1.9, 2.7, and 4.4 eV were observed under an excitation of 5.0 eV. An isochronal annealing experiment revealed that unrelaxed oxygen vacancies ODC(II) and interstitial oxygen were generated as dominant species during the irradiation. In the annealing, diffusion of the interstitial oxygen was thermally activated, leading to a direct reduction of oxygen-deficiency-related defects such as ODC(II) and E′ center. The concentration of oxygen-excess-related defects such as peroxy radicals, together with nonbridging oxygen-hole centers, increased first with annealing then decreased with the exhaustion of oxygen and their precursor, the E′ center. The recombination of oxygen vacancies with interstitial oxygen is characterized as the major process occurring during the annealing.

元の言語English
ページ(範囲)3450-3455
ページ数6
ジャーナルJournal of Physical Chemistry B
104
発行部数15
出版物ステータスPublished - 2000 4 20
外部発表Yes

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Fused silica
Ultrashort pulses
infrared lasers
Irradiation
Oxygen
silicon dioxide
Infrared radiation
Defects
irradiation
defects
oxygen
Annealing
interstitials
Oxygen vacancies
annealing
exhaustion
hypoxia
Laser beams
Photoluminescence
Photons

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Engineering(all)

これを引用

Generation and recombination of defects in vitreous silica induced by irradiation with a near-infrared femtosecond laser. / Sun, Hong Bo; Juodkazis, Saulius; Watanabe, Mitsuru; Matsuo, Shigeki; Misawa, Hiroaki; Nishii, Junji.

:: Journal of Physical Chemistry B, 巻 104, 番号 15, 20.04.2000, p. 3450-3455.

研究成果: Article

Sun, Hong Bo ; Juodkazis, Saulius ; Watanabe, Mitsuru ; Matsuo, Shigeki ; Misawa, Hiroaki ; Nishii, Junji. / Generation and recombination of defects in vitreous silica induced by irradiation with a near-infrared femtosecond laser. :: Journal of Physical Chemistry B. 2000 ; 巻 104, 番号 15. pp. 3450-3455.
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AU - Sun, Hong Bo

AU - Juodkazis, Saulius

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AU - Matsuo, Shigeki

AU - Misawa, Hiroaki

AU - Nishii, Junji

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N2 - Properties of defects induced by irradiation with a near-infrared femtosecond laser beam into vitreous silica are reported. Three photoluminescence bands with photon energy of 1.9, 2.7, and 4.4 eV were observed under an excitation of 5.0 eV. An isochronal annealing experiment revealed that unrelaxed oxygen vacancies ODC(II) and interstitial oxygen were generated as dominant species during the irradiation. In the annealing, diffusion of the interstitial oxygen was thermally activated, leading to a direct reduction of oxygen-deficiency-related defects such as ODC(II) and E′ center. The concentration of oxygen-excess-related defects such as peroxy radicals, together with nonbridging oxygen-hole centers, increased first with annealing then decreased with the exhaustion of oxygen and their precursor, the E′ center. The recombination of oxygen vacancies with interstitial oxygen is characterized as the major process occurring during the annealing.

AB - Properties of defects induced by irradiation with a near-infrared femtosecond laser beam into vitreous silica are reported. Three photoluminescence bands with photon energy of 1.9, 2.7, and 4.4 eV were observed under an excitation of 5.0 eV. An isochronal annealing experiment revealed that unrelaxed oxygen vacancies ODC(II) and interstitial oxygen were generated as dominant species during the irradiation. In the annealing, diffusion of the interstitial oxygen was thermally activated, leading to a direct reduction of oxygen-deficiency-related defects such as ODC(II) and E′ center. The concentration of oxygen-excess-related defects such as peroxy radicals, together with nonbridging oxygen-hole centers, increased first with annealing then decreased with the exhaustion of oxygen and their precursor, the E′ center. The recombination of oxygen vacancies with interstitial oxygen is characterized as the major process occurring during the annealing.

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