Growth mechanism difference of sputtered HfO2 on Ge and on Si

Koji Kita, Kentaro Kyuno, Akira Toriumi

研究成果: Article査読

88 被引用数 (Scopus)

抄録

Difference in growth mechanism of HfO2 on Ge and Si deposited by the reactive sputtering was analyzed. It was found that the interface layer and the HfO2 film was thinner on Ge than that on Si. An advantage of HfO2/Ge was found over HfO2/Si systems from the viewpoint of further reduction of the gate oxide thickness in the ultrathin high-k gate dielectric region. The results show that the metallic Hf layer, deposited before HfO2 deposition have a crucial role for the thickness differences of both interface layers and HfO2 films on those substrates.

本文言語English
ページ(範囲)52-54
ページ数3
ジャーナルApplied Physics Letters
85
1
DOI
出版ステータスPublished - 2004 7 5
外部発表はい

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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