Growth of 100-mm-diameter AlGaN/GaN heterostructures on sapphire substrates by MOVPE

M. Miyoshi, Hiroyasu Ishikawa, T. Egawa, T. Jimbo

研究成果: Conference contribution

2 引用 (Scopus)

抄録

For the purpose of the practical use of GaN-based electronic devices, we demonstrated the growth of 100-mm-diameter AlGaN/GaN heterostructures on c-face sapphire substrates by metalorganic vapor phase epitaxy (MOVPE). The obtained films have specular surface, good crystal quality and good uniformity of the Al composition across the entire epitaxial wafer. These epitaxial wafers showed a relatively high electron mobility, 1320 ± 80 cm 2/Vs with the sheet carrier concentration of 8.4 ± 0.5 × 10 12/cm 3 at room temperature, across the entire epitaxial wafer. High-electron-mobility transistors (HEMTs) fabricated on the 100-mm-diameter epitaxial wafer also exhibited good dc characteristics. Typical values of the peak extrinsic transconductance and the maximum drain current density were 200 mS/mm and 534 mA/mm, respectively, for the device with the gate length of 2.0 μm and the gate width of 15.0 μm.

元の言語English
ホスト出版物のタイトルPhysica Status Solidi C: Conferences
ページ2091-2094
ページ数4
エディション7
DOI
出版物ステータスPublished - 2003
外部発表Yes
イベント5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, Japan
継続期間: 2003 5 252003 5 30

Other

Other5th International Conference on Nitride Semiconductors, ICNS 2003
Japan
Nara
期間03/5/2503/5/30

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Metallorganic vapor phase epitaxy
Aluminum Oxide
Electron mobility
Drain current
Transconductance
High electron mobility transistors
Sapphire
vapor phase epitaxy
Carrier concentration
Heterojunctions
sapphire
Current density
wafers
Crystals
Substrates
Chemical analysis
Temperature
transconductance
high electron mobility transistors
electron mobility

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

これを引用

Miyoshi, M., Ishikawa, H., Egawa, T., & Jimbo, T. (2003). Growth of 100-mm-diameter AlGaN/GaN heterostructures on sapphire substrates by MOVPE. : Physica Status Solidi C: Conferences (7 版, pp. 2091-2094) https://doi.org/10.1002/pssc.200303445

Growth of 100-mm-diameter AlGaN/GaN heterostructures on sapphire substrates by MOVPE. / Miyoshi, M.; Ishikawa, Hiroyasu; Egawa, T.; Jimbo, T.

Physica Status Solidi C: Conferences. 7. 編 2003. p. 2091-2094.

研究成果: Conference contribution

Miyoshi, M, Ishikawa, H, Egawa, T & Jimbo, T 2003, Growth of 100-mm-diameter AlGaN/GaN heterostructures on sapphire substrates by MOVPE. : Physica Status Solidi C: Conferences. 7 Edn, pp. 2091-2094, 5th International Conference on Nitride Semiconductors, ICNS 2003, Nara, Japan, 03/5/25. https://doi.org/10.1002/pssc.200303445
Miyoshi M, Ishikawa H, Egawa T, Jimbo T. Growth of 100-mm-diameter AlGaN/GaN heterostructures on sapphire substrates by MOVPE. : Physica Status Solidi C: Conferences. 7 版 2003. p. 2091-2094 https://doi.org/10.1002/pssc.200303445
Miyoshi, M. ; Ishikawa, Hiroyasu ; Egawa, T. ; Jimbo, T. / Growth of 100-mm-diameter AlGaN/GaN heterostructures on sapphire substrates by MOVPE. Physica Status Solidi C: Conferences. 7. 版 2003. pp. 2091-2094
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