Growth of 100-mm-Diameter AlGaN/GaN Heterostructures on Sapphire Substrates by MOVPE

Makoto Miyoshi, Masahiro Sakai, Hiroyasu Ishikawa, Takashi Egawa, Takashi Jimbo, Mitsuhiro Tanaka, Osamu Oda

研究成果: Article査読

4 被引用数 (Scopus)


For the mass production of GaN-based electronic devices, growth of AlGaN/GaN heterostructures on substrates larger than 100mm in diameter is indispensable. In this study, we demonstrate the growth of 100-mm-diameter Al0.26Ga0.74N/GaN heterostructures on sapphire substrates by metalorganic vapor phase epitaxy (MOVPE). The obtained films have specular surfaces, good crystal quality and good uniformity of alloy composition across the entire 100-mm-diameter epitaxial wafer. The bowing value of the 100-mm-diameter epitaxial wafer on c-face sapphire substrates is about 40 μm. This bowing value seems to be preferable for electronic device fabrication processes. These epitaxial wafers show good electrical properties.

ジャーナルIEICE Transactions on Electronics
出版ステータスPublished - 2003 10

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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