Growth of GaN on 4-inch Si substrate with a thin AlGaN/AlN intermediate layer

Hiroyasu Ishikawa, M. Kato, M. S. Hao, T. Egawa, T. Jimbo

研究成果: Conference contribution

8 引用 (Scopus)

抄録

We have investigated the crystal growth of GaN on 4-inch Si substrate with a thin AlGaN/AlN intermediate layer. Both the density of pits and the full-width at half-maximum (FWHM) value of the X-ray rocking curve (XRC, ω mode, GaN (0004)) decreased with increasing thickness of the AlGaN/AlN intermediate layer. We have also investigated the quality of GaN and wafer bowing as a function of the GaN layer thickness. With the increase of GaN layer thickness, the FWHM of XRC decreased and the bowing distance of the wafer increases. While the narrowest FWHM value (GaN (0004)) was obtained to be 700 arcsec from 1.5-μm-thick GaN, the bowing distance of the wafer was 100 μm and some cracks were observed at the edge of the wafer. We conclude that the optimum thickness of GaN on 4-inch Si substrate is 1 μm. The FWHM for the near band edge emission of GaN peaking at 364.5 nm was obtained to be 43.9 meV from 1-μm-thick GaN.

元の言語English
ホスト出版物のタイトルPhysica Status Solidi C: Conferences
ページ2177-2180
ページ数4
エディション7
DOI
出版物ステータスPublished - 2003
外部発表Yes
イベント5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, Japan
継続期間: 2003 5 252003 5 30

Other

Other5th International Conference on Nitride Semiconductors, ICNS 2003
Japan
Nara
期間03/5/2503/5/30

Fingerprint

Full width at half maximum
Bending (forming)
wafers
Substrates
Crystallization
Crystal growth
crystal growth
cracks
Cracks
X rays
aluminum gallium nitride
curves
x rays

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

これを引用

Ishikawa, H., Kato, M., Hao, M. S., Egawa, T., & Jimbo, T. (2003). Growth of GaN on 4-inch Si substrate with a thin AlGaN/AlN intermediate layer. : Physica Status Solidi C: Conferences (7 版, pp. 2177-2180) https://doi.org/10.1002/pssc.200303332

Growth of GaN on 4-inch Si substrate with a thin AlGaN/AlN intermediate layer. / Ishikawa, Hiroyasu; Kato, M.; Hao, M. S.; Egawa, T.; Jimbo, T.

Physica Status Solidi C: Conferences. 7. 編 2003. p. 2177-2180.

研究成果: Conference contribution

Ishikawa, H, Kato, M, Hao, MS, Egawa, T & Jimbo, T 2003, Growth of GaN on 4-inch Si substrate with a thin AlGaN/AlN intermediate layer. : Physica Status Solidi C: Conferences. 7 Edn, pp. 2177-2180, 5th International Conference on Nitride Semiconductors, ICNS 2003, Nara, Japan, 03/5/25. https://doi.org/10.1002/pssc.200303332
Ishikawa H, Kato M, Hao MS, Egawa T, Jimbo T. Growth of GaN on 4-inch Si substrate with a thin AlGaN/AlN intermediate layer. : Physica Status Solidi C: Conferences. 7 版 2003. p. 2177-2180 https://doi.org/10.1002/pssc.200303332
Ishikawa, Hiroyasu ; Kato, M. ; Hao, M. S. ; Egawa, T. ; Jimbo, T. / Growth of GaN on 4-inch Si substrate with a thin AlGaN/AlN intermediate layer. Physica Status Solidi C: Conferences. 7. 版 2003. pp. 2177-2180
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N2 - We have investigated the crystal growth of GaN on 4-inch Si substrate with a thin AlGaN/AlN intermediate layer. Both the density of pits and the full-width at half-maximum (FWHM) value of the X-ray rocking curve (XRC, ω mode, GaN (0004)) decreased with increasing thickness of the AlGaN/AlN intermediate layer. We have also investigated the quality of GaN and wafer bowing as a function of the GaN layer thickness. With the increase of GaN layer thickness, the FWHM of XRC decreased and the bowing distance of the wafer increases. While the narrowest FWHM value (GaN (0004)) was obtained to be 700 arcsec from 1.5-μm-thick GaN, the bowing distance of the wafer was 100 μm and some cracks were observed at the edge of the wafer. We conclude that the optimum thickness of GaN on 4-inch Si substrate is 1 μm. The FWHM for the near band edge emission of GaN peaking at 364.5 nm was obtained to be 43.9 meV from 1-μm-thick GaN.

AB - We have investigated the crystal growth of GaN on 4-inch Si substrate with a thin AlGaN/AlN intermediate layer. Both the density of pits and the full-width at half-maximum (FWHM) value of the X-ray rocking curve (XRC, ω mode, GaN (0004)) decreased with increasing thickness of the AlGaN/AlN intermediate layer. We have also investigated the quality of GaN and wafer bowing as a function of the GaN layer thickness. With the increase of GaN layer thickness, the FWHM of XRC decreased and the bowing distance of the wafer increases. While the narrowest FWHM value (GaN (0004)) was obtained to be 700 arcsec from 1.5-μm-thick GaN, the bowing distance of the wafer was 100 μm and some cracks were observed at the edge of the wafer. We conclude that the optimum thickness of GaN on 4-inch Si substrate is 1 μm. The FWHM for the near band edge emission of GaN peaking at 364.5 nm was obtained to be 43.9 meV from 1-μm-thick GaN.

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