Growth of high-quality GaN films on epitaxial AlN/sapphire templates by MOVPE

Masahiro Sakai, Hiroyasu Ishikawa, Takashi Egawa, Takashi Jimbo, Masayoshi Umeno, Tomohiko Shibata, Keiichiro Asai, Shigeaki Sumiya, Yoshitaka Kuraoka, Mitsuhiro Tanaka, Osamu Oda

研究成果: Article査読

53 被引用数 (Scopus)

抄録

High-quality GaN films were grown on epitaxial AlN/sapphire templates by metal-organic vapor phase epitaxy. The Hall mobility as high as 790 cm2/Vs with the carrier concentration of 7.6 × 1016 cm-3 at 300 K along with low dislocation density of 5 × 107 cm-2 have been achieved. The X-ray rocking curve full-width at half-maximum were 61 and 232 arcsec for the (0 0 0 4) and (2 0 2̄ 4) reflections, respectively. Atomic force microscopy images showed smooth surface morphology and clear step formation. Additionally, pit terminations could be hardly found. Photoluminescence measurement revealed a higher intensity near the band edge.

本文言語English
ページ(範囲)6-11
ページ数6
ジャーナルJournal of Crystal Growth
244
1
DOI
出版ステータスPublished - 2002 9 1
外部発表はい

ASJC Scopus subject areas

  • 凝縮系物理学
  • 無機化学
  • 材料化学

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