GROWTH of platy InGaAs single crystals and fabrication of 1.3 μm laser diodes

K. Kinoshita, T. Ueda, S. Adachi, T. Masaki, S. Yoda, M. Arai, T. Watanabe, M. Yuda, Y. Kondo

研究成果: Conference contribution

抜粋

High quality InxGa1-xAs platy single crystals (x: 0.1 - 0.2) were grown by the newly invented growth method named as the traveling liquidus-zone (TLZ) method. Laser diodes lasing at 1.3 μm wavelength were fabricated on these substrates and showed good temperature stability of output power as predicted.

元の言語English
ホスト出版物のタイトルIPRM'07
ホスト出版物のサブタイトルIEEE 19th International Conference on Indium Phosphide and Related Materials - Conference Proceedings
ページ339-342
ページ数4
DOI
出版物ステータスPublished - 2007 10 2
外部発表Yes
イベントIPRM'07: IEEE 19th International Conference on Indium Phosphide and Related Materials - Matsue, Japan
継続期間: 2007 5 142007 5 18

出版物シリーズ

名前Conference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN(印刷物)1092-8669

Conference

ConferenceIPRM'07: IEEE 19th International Conference on Indium Phosphide and Related Materials
Japan
Matsue
期間07/5/1407/5/18

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

フィンガープリント GROWTH of platy InGaAs single crystals and fabrication of 1.3 μm laser diodes' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。

  • これを引用

    Kinoshita, K., Ueda, T., Adachi, S., Masaki, T., Yoda, S., Arai, M., Watanabe, T., Yuda, M., & Kondo, Y. (2007). GROWTH of platy InGaAs single crystals and fabrication of 1.3 μm laser diodes. : IPRM'07: IEEE 19th International Conference on Indium Phosphide and Related Materials - Conference Proceedings (pp. 339-342). [4265949] (Conference Proceedings - International Conference on Indium Phosphide and Related Materials). https://doi.org/10.1109/ICIPRM.2007.381192