Hafnium silicate gate dielectrics in GaN metal oxide semiconductor capacitors

Toshihide Nabatame, Erika Maeda, Mari Inoue, Kazuya Yuge, Masafumi Hirose, Koji Shiozaki, Naoki Ikeda, Tomoji Ohishi, Akihiko Ohi

研究成果査読

18 被引用数 (Scopus)

抄録

Characteristics of hafnium silicate as gate dielectric in n-GaN capacitors were investigated. The Hf 0.57 Si 0.43 O x , Hf 0.64 Si 0.36 O x and HfO 2 films exhibited high dielectric constants of 15.4, 15.9, and 17.6, respectively. The Hf 0.57 Si 0.43 O x and Hf 0.64 Si 0.36 O x films, which had an amorphous structure, showed superior properties, including a minimal flatband voltage (V fb ) hysteresis (≤70 mV) and a small V fb shift (≤-0.45 V), as well as a low interface state density (∼4 × 10 11 cm -2 eV -1 at -0.4 eV from conduction band), and a high breakdown electric field (≥8.6 MV cm -1 ) compared to those of a polycrystalline HfO 2 film.

本文言語English
論文番号011009
ジャーナルApplied Physics Express
12
1
DOI
出版ステータスPublished - 2019 1 1

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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