Hafnium silicate gate dielectrics in GaN metal oxide semiconductor capacitors

Toshihide Nabatame, Erika Maeda, Mari Inoue, Kazuya Yuge, Masafumi Hirose, Koji Shiozaki, Naoki Ikeda, Tomoji Ohishi, Akihiko Ohi

研究成果: Article

2 引用 (Scopus)

抄録

Characteristics of hafnium silicate as gate dielectric in n-GaN capacitors were investigated. The Hf0.57Si0.43O x , Hf0.64Si0.36O x and HfO2 films exhibited high dielectric constants of 15.4, 15.9, and 17.6, respectively. The Hf0.57Si0.43O x and Hf0.64Si0.36O x films, which had an amorphous structure, showed superior properties, including a minimal flatband voltage (V fb) hysteresis (≤70 mV) and a small V fb shift (≤-0.45 V), as well as a low interface state density (∼4 × 1011 cm-2 eV-1 at -0.4 eV from conduction band), and a high breakdown electric field (≥8.6 MV cm-1) compared to those of a polycrystalline HfO2 film.

元の言語English
記事番号011009
ジャーナルApplied Physics Express
12
発行部数1
DOI
出版物ステータスPublished - 2019 1 1

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Hafnium
hafnium
Gate dielectrics
metal oxide semiconductors
Silicates
silicates
capacitors
Capacitors
Metals
Interface states
Conduction bands
Hysteresis
conduction bands
Permittivity
breakdown
hysteresis
Electric fields
permittivity
electric fields
shift

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

これを引用

Nabatame, T., Maeda, E., Inoue, M., Yuge, K., Hirose, M., Shiozaki, K., ... Ohi, A. (2019). Hafnium silicate gate dielectrics in GaN metal oxide semiconductor capacitors. Applied Physics Express, 12(1), [011009]. https://doi.org/10.7567/1882-0786/aaf62a

Hafnium silicate gate dielectrics in GaN metal oxide semiconductor capacitors. / Nabatame, Toshihide; Maeda, Erika; Inoue, Mari; Yuge, Kazuya; Hirose, Masafumi; Shiozaki, Koji; Ikeda, Naoki; Ohishi, Tomoji; Ohi, Akihiko.

:: Applied Physics Express, 巻 12, 番号 1, 011009, 01.01.2019.

研究成果: Article

Nabatame, T, Maeda, E, Inoue, M, Yuge, K, Hirose, M, Shiozaki, K, Ikeda, N, Ohishi, T & Ohi, A 2019, 'Hafnium silicate gate dielectrics in GaN metal oxide semiconductor capacitors', Applied Physics Express, 巻. 12, 番号 1, 011009. https://doi.org/10.7567/1882-0786/aaf62a
Nabatame T, Maeda E, Inoue M, Yuge K, Hirose M, Shiozaki K その他. Hafnium silicate gate dielectrics in GaN metal oxide semiconductor capacitors. Applied Physics Express. 2019 1 1;12(1). 011009. https://doi.org/10.7567/1882-0786/aaf62a
Nabatame, Toshihide ; Maeda, Erika ; Inoue, Mari ; Yuge, Kazuya ; Hirose, Masafumi ; Shiozaki, Koji ; Ikeda, Naoki ; Ohishi, Tomoji ; Ohi, Akihiko. / Hafnium silicate gate dielectrics in GaN metal oxide semiconductor capacitors. :: Applied Physics Express. 2019 ; 巻 12, 番号 1.
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AU - Hirose, Masafumi

AU - Shiozaki, Koji

AU - Ikeda, Naoki

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