抜粋
Half-micron pitch Cu interconnections have been achieved by self-aligned plug (SAP), MOCVD-TiN barrier layer (MBL), and alumina capped oxidation-free structure (ACOS). Low resistance 0.12μm Cu interconnections whose effective resistivity is 1.9μΩcm have been obtained. Improved thermal stability up to 600°C has been achieved for quarter-micron Cu contacts. Cu oxidation has been suppressed without increasing resistance by using a trimethylaluminum (TMA) treatment.
| 元の言語 | English |
|---|---|
| ページ（範囲） | 27-28 |
| ページ数 | 2 |
| ジャーナル | Digest of Technical Papers - Symposium on VLSI Technology |
| 出版物ステータス | Published - 1995 12 1 |
| イベント | Proceedings of the 1995 Symposium on VLSI Technology - Kyoto, Jpn 継続期間: 1995 6 6 → 1995 6 8 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
フィンガープリント Half-micron pitch Cu interconnection technology' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。
これを引用
Ueno, K., Ohto, K., & Tsunenari, K. (1995). Half-micron pitch Cu interconnection technology. Digest of Technical Papers - Symposium on VLSI Technology, 27-28.