TY - JOUR
T1 - Half-micron pitch Cu interconnection technology
AU - Ueno, Kazuyoshi
AU - Ohto, Koichi
AU - Tsunenari, Kinji
PY - 1995/12/1
Y1 - 1995/12/1
N2 - Half-micron pitch Cu interconnections have been achieved by self-aligned plug (SAP), MOCVD-TiN barrier layer (MBL), and alumina capped oxidation-free structure (ACOS). Low resistance 0.12μm Cu interconnections whose effective resistivity is 1.9μΩcm have been obtained. Improved thermal stability up to 600°C has been achieved for quarter-micron Cu contacts. Cu oxidation has been suppressed without increasing resistance by using a trimethylaluminum (TMA) treatment.
AB - Half-micron pitch Cu interconnections have been achieved by self-aligned plug (SAP), MOCVD-TiN barrier layer (MBL), and alumina capped oxidation-free structure (ACOS). Low resistance 0.12μm Cu interconnections whose effective resistivity is 1.9μΩcm have been obtained. Improved thermal stability up to 600°C has been achieved for quarter-micron Cu contacts. Cu oxidation has been suppressed without increasing resistance by using a trimethylaluminum (TMA) treatment.
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M3 - Conference article
AN - SCOPUS:0029484254
SP - 27
EP - 28
JO - Digest of Technical Papers - Symposium on VLSI Technology
JF - Digest of Technical Papers - Symposium on VLSI Technology
SN - 0743-1562
T2 - Proceedings of the 1995 Symposium on VLSI Technology
Y2 - 6 June 1995 through 8 June 1995
ER -