抄録
Typical features and suitable application fields for HBTs (Heterojunction Bipolar Transistors) are demonstrated by using an active device application radar chart. To enhance the typical features, AlGaAs/GaAs Hetero-Guardring Fully Self-Aligned HBT (HG-FST) has been newly developed. By introducing the Hetero-Guardring layer, composed of depleted AlGaAs, at emitter periphery, an emitter size effect on current gain has been significantly reduced, and 1/f noise has been improved by 17 dB compared with conventional AlGaAs/GaAs HBT. DC and RF yield could also be improved. As suitable applications of HG-FST, a low phase noise 22 GHz MMIC (Monolithic Microwave IC) oscillator, ultrahigh-speed fiber optical communication ICs such as a transimpedance amplifier, a D-type flip-flop, an LD driver circuit, and a general-purpose 1K gate array LSI exhibiting 82 psec propagation delay time under FI = F0 = 3, l = 1 mm condition have been developed.
| 元の言語 | English |
|---|---|
| ホスト出版物のタイトル | NEC Research and Development |
| ページ | 324-334 |
| ページ数 | 11 |
| 巻 | 33 |
| エディション | 3 |
| 出版物ステータス | Published - 1992 7 |
| 外部発表 | Yes |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
これを引用
Hetero-guardring fully self-aligned HBT (HG-FST) for microwave and high-speed digital applications. / Honjo, Kazuhiko; Hayama, Nobuyuki; Nagano, Nobuo; Takahashi, Hideki; Tanaka, Shinichi; Shimawaki, Hidenori.
NEC Research and Development. 巻 33 3. 編 1992. p. 324-334.研究成果: Chapter
}
TY - CHAP
T1 - Hetero-guardring fully self-aligned HBT (HG-FST) for microwave and high-speed digital applications
AU - Honjo, Kazuhiko
AU - Hayama, Nobuyuki
AU - Nagano, Nobuo
AU - Takahashi, Hideki
AU - Tanaka, Shinichi
AU - Shimawaki, Hidenori
PY - 1992/7
Y1 - 1992/7
N2 - Typical features and suitable application fields for HBTs (Heterojunction Bipolar Transistors) are demonstrated by using an active device application radar chart. To enhance the typical features, AlGaAs/GaAs Hetero-Guardring Fully Self-Aligned HBT (HG-FST) has been newly developed. By introducing the Hetero-Guardring layer, composed of depleted AlGaAs, at emitter periphery, an emitter size effect on current gain has been significantly reduced, and 1/f noise has been improved by 17 dB compared with conventional AlGaAs/GaAs HBT. DC and RF yield could also be improved. As suitable applications of HG-FST, a low phase noise 22 GHz MMIC (Monolithic Microwave IC) oscillator, ultrahigh-speed fiber optical communication ICs such as a transimpedance amplifier, a D-type flip-flop, an LD driver circuit, and a general-purpose 1K gate array LSI exhibiting 82 psec propagation delay time under FI = F0 = 3, l = 1 mm condition have been developed.
AB - Typical features and suitable application fields for HBTs (Heterojunction Bipolar Transistors) are demonstrated by using an active device application radar chart. To enhance the typical features, AlGaAs/GaAs Hetero-Guardring Fully Self-Aligned HBT (HG-FST) has been newly developed. By introducing the Hetero-Guardring layer, composed of depleted AlGaAs, at emitter periphery, an emitter size effect on current gain has been significantly reduced, and 1/f noise has been improved by 17 dB compared with conventional AlGaAs/GaAs HBT. DC and RF yield could also be improved. As suitable applications of HG-FST, a low phase noise 22 GHz MMIC (Monolithic Microwave IC) oscillator, ultrahigh-speed fiber optical communication ICs such as a transimpedance amplifier, a D-type flip-flop, an LD driver circuit, and a general-purpose 1K gate array LSI exhibiting 82 psec propagation delay time under FI = F0 = 3, l = 1 mm condition have been developed.
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UR - http://www.scopus.com/inward/citedby.url?scp=0026889119&partnerID=8YFLogxK
M3 - Chapter
AN - SCOPUS:0026889119
VL - 33
SP - 324
EP - 334
BT - NEC Research and Development
ER -