Hetero-guardring fully self-aligned HBT (HG-FST) for microwave and high-speed digital applications

Kazuhiko Honjo, Nobuyuki Hayama, Nobuo Nagano, Hideki Takahashi, Shinichi Tanaka, Hidenori Shimawaki

研究成果: Chapter

1 引用 (Scopus)

抄録

Typical features and suitable application fields for HBTs (Heterojunction Bipolar Transistors) are demonstrated by using an active device application radar chart. To enhance the typical features, AlGaAs/GaAs Hetero-Guardring Fully Self-Aligned HBT (HG-FST) has been newly developed. By introducing the Hetero-Guardring layer, composed of depleted AlGaAs, at emitter periphery, an emitter size effect on current gain has been significantly reduced, and 1/f noise has been improved by 17 dB compared with conventional AlGaAs/GaAs HBT. DC and RF yield could also be improved. As suitable applications of HG-FST, a low phase noise 22 GHz MMIC (Monolithic Microwave IC) oscillator, ultrahigh-speed fiber optical communication ICs such as a transimpedance amplifier, a D-type flip-flop, an LD driver circuit, and a general-purpose 1K gate array LSI exhibiting 82 psec propagation delay time under FI = F0 = 3, l = 1 mm condition have been developed.

元の言語English
ホスト出版物のタイトルNEC Research and Development
ページ324-334
ページ数11
33
エディション3
出版物ステータスPublished - 1992 7
外部発表Yes

Fingerprint

Heterojunction bipolar transistors
Microwaves
Optical fiber communication
Flip flop circuits
Operational amplifiers
Phase noise
Time delay
Radar
Networks (circuits)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

これを引用

Honjo, K., Hayama, N., Nagano, N., Takahashi, H., Tanaka, S., & Shimawaki, H. (1992). Hetero-guardring fully self-aligned HBT (HG-FST) for microwave and high-speed digital applications. : NEC Research and Development (3 版, 巻 33, pp. 324-334)

Hetero-guardring fully self-aligned HBT (HG-FST) for microwave and high-speed digital applications. / Honjo, Kazuhiko; Hayama, Nobuyuki; Nagano, Nobuo; Takahashi, Hideki; Tanaka, Shinichi; Shimawaki, Hidenori.

NEC Research and Development. 巻 33 3. 編 1992. p. 324-334.

研究成果: Chapter

Honjo, K, Hayama, N, Nagano, N, Takahashi, H, Tanaka, S & Shimawaki, H 1992, Hetero-guardring fully self-aligned HBT (HG-FST) for microwave and high-speed digital applications. : NEC Research and Development. 3 Edn, 巻. 33, pp. 324-334.
Honjo K, Hayama N, Nagano N, Takahashi H, Tanaka S, Shimawaki H. Hetero-guardring fully self-aligned HBT (HG-FST) for microwave and high-speed digital applications. : NEC Research and Development. 3 版 巻 33. 1992. p. 324-334
Honjo, Kazuhiko ; Hayama, Nobuyuki ; Nagano, Nobuo ; Takahashi, Hideki ; Tanaka, Shinichi ; Shimawaki, Hidenori. / Hetero-guardring fully self-aligned HBT (HG-FST) for microwave and high-speed digital applications. NEC Research and Development. 巻 33 3. 版 1992. pp. 324-334
@inbook{8bc4738781064961afec27e09aeacf9e,
title = "Hetero-guardring fully self-aligned HBT (HG-FST) for microwave and high-speed digital applications",
abstract = "Typical features and suitable application fields for HBTs (Heterojunction Bipolar Transistors) are demonstrated by using an active device application radar chart. To enhance the typical features, AlGaAs/GaAs Hetero-Guardring Fully Self-Aligned HBT (HG-FST) has been newly developed. By introducing the Hetero-Guardring layer, composed of depleted AlGaAs, at emitter periphery, an emitter size effect on current gain has been significantly reduced, and 1/f noise has been improved by 17 dB compared with conventional AlGaAs/GaAs HBT. DC and RF yield could also be improved. As suitable applications of HG-FST, a low phase noise 22 GHz MMIC (Monolithic Microwave IC) oscillator, ultrahigh-speed fiber optical communication ICs such as a transimpedance amplifier, a D-type flip-flop, an LD driver circuit, and a general-purpose 1K gate array LSI exhibiting 82 psec propagation delay time under FI = F0 = 3, l = 1 mm condition have been developed.",
author = "Kazuhiko Honjo and Nobuyuki Hayama and Nobuo Nagano and Hideki Takahashi and Shinichi Tanaka and Hidenori Shimawaki",
year = "1992",
month = "7",
language = "English",
volume = "33",
pages = "324--334",
booktitle = "NEC Research and Development",
edition = "3",

}

TY - CHAP

T1 - Hetero-guardring fully self-aligned HBT (HG-FST) for microwave and high-speed digital applications

AU - Honjo, Kazuhiko

AU - Hayama, Nobuyuki

AU - Nagano, Nobuo

AU - Takahashi, Hideki

AU - Tanaka, Shinichi

AU - Shimawaki, Hidenori

PY - 1992/7

Y1 - 1992/7

N2 - Typical features and suitable application fields for HBTs (Heterojunction Bipolar Transistors) are demonstrated by using an active device application radar chart. To enhance the typical features, AlGaAs/GaAs Hetero-Guardring Fully Self-Aligned HBT (HG-FST) has been newly developed. By introducing the Hetero-Guardring layer, composed of depleted AlGaAs, at emitter periphery, an emitter size effect on current gain has been significantly reduced, and 1/f noise has been improved by 17 dB compared with conventional AlGaAs/GaAs HBT. DC and RF yield could also be improved. As suitable applications of HG-FST, a low phase noise 22 GHz MMIC (Monolithic Microwave IC) oscillator, ultrahigh-speed fiber optical communication ICs such as a transimpedance amplifier, a D-type flip-flop, an LD driver circuit, and a general-purpose 1K gate array LSI exhibiting 82 psec propagation delay time under FI = F0 = 3, l = 1 mm condition have been developed.

AB - Typical features and suitable application fields for HBTs (Heterojunction Bipolar Transistors) are demonstrated by using an active device application radar chart. To enhance the typical features, AlGaAs/GaAs Hetero-Guardring Fully Self-Aligned HBT (HG-FST) has been newly developed. By introducing the Hetero-Guardring layer, composed of depleted AlGaAs, at emitter periphery, an emitter size effect on current gain has been significantly reduced, and 1/f noise has been improved by 17 dB compared with conventional AlGaAs/GaAs HBT. DC and RF yield could also be improved. As suitable applications of HG-FST, a low phase noise 22 GHz MMIC (Monolithic Microwave IC) oscillator, ultrahigh-speed fiber optical communication ICs such as a transimpedance amplifier, a D-type flip-flop, an LD driver circuit, and a general-purpose 1K gate array LSI exhibiting 82 psec propagation delay time under FI = F0 = 3, l = 1 mm condition have been developed.

UR - http://www.scopus.com/inward/record.url?scp=0026889119&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0026889119&partnerID=8YFLogxK

M3 - Chapter

AN - SCOPUS:0026889119

VL - 33

SP - 324

EP - 334

BT - NEC Research and Development

ER -