High crystallinity multilayer graphene deposited by a low-temperature CVD using Ni catalyst with applying current

Tomoki Akimoto, Kazuyoshi Ueno

研究成果: Conference contribution

抄録

To achieve a low temperature deposition of high crystalline multilayer graphene (MLG), the effect of applying current to the catalyst layer was investigated in MLG-CVD using Ni catalyst. When the substrate temperature was varied at a fixed current, the MLG crystallinity was improved as the temperature became lower, and the G/D ratio of 40 was obtained at 464 °C. By optimizing the precursor flow-rate and deposition time, complete surface coverage was obtained at 490 °C.

元の言語English
ホスト出版物のタイトル2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
出版者Institute of Electrical and Electronics Engineers Inc.
ページ351-353
ページ数3
ISBN(電子版)9781538665084
DOI
出版物ステータスPublished - 2019 3 1
イベント2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 - Singapore, Singapore
継続期間: 2019 3 122019 3 15

出版物シリーズ

名前2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019

Conference

Conference2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
Singapore
Singapore
期間19/3/1219/3/15

Fingerprint

Graphite
Graphene
Chemical vapor deposition
crystallinity
graphene
Multilayers
vapor deposition
catalysts
Catalysts
Temperature
flow velocity
Flow rate
Crystalline materials
Substrates
temperature

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Hardware and Architecture

これを引用

Akimoto, T., & Ueno, K. (2019). High crystallinity multilayer graphene deposited by a low-temperature CVD using Ni catalyst with applying current. : 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 (pp. 351-353). [8731128] (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM.2019.8731128

High crystallinity multilayer graphene deposited by a low-temperature CVD using Ni catalyst with applying current. / Akimoto, Tomoki; Ueno, Kazuyoshi.

2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019. Institute of Electrical and Electronics Engineers Inc., 2019. p. 351-353 8731128 (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019).

研究成果: Conference contribution

Akimoto, T & Ueno, K 2019, High crystallinity multilayer graphene deposited by a low-temperature CVD using Ni catalyst with applying current. : 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019., 8731128, 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019, Institute of Electrical and Electronics Engineers Inc., pp. 351-353, 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019, Singapore, Singapore, 19/3/12. https://doi.org/10.1109/EDTM.2019.8731128
Akimoto T, Ueno K. High crystallinity multilayer graphene deposited by a low-temperature CVD using Ni catalyst with applying current. : 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019. Institute of Electrical and Electronics Engineers Inc. 2019. p. 351-353. 8731128. (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019). https://doi.org/10.1109/EDTM.2019.8731128
Akimoto, Tomoki ; Ueno, Kazuyoshi. / High crystallinity multilayer graphene deposited by a low-temperature CVD using Ni catalyst with applying current. 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019. Institute of Electrical and Electronics Engineers Inc., 2019. pp. 351-353 (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019).
@inproceedings{be162807399b4caf89aa63acf6b77384,
title = "High crystallinity multilayer graphene deposited by a low-temperature CVD using Ni catalyst with applying current",
abstract = "To achieve a low temperature deposition of high crystalline multilayer graphene (MLG), the effect of applying current to the catalyst layer was investigated in MLG-CVD using Ni catalyst. When the substrate temperature was varied at a fixed current, the MLG crystallinity was improved as the temperature became lower, and the G/D ratio of 40 was obtained at 464 °C. By optimizing the precursor flow-rate and deposition time, complete surface coverage was obtained at 490 °C.",
keywords = "current, CVD, multilayer graphene",
author = "Tomoki Akimoto and Kazuyoshi Ueno",
year = "2019",
month = "3",
day = "1",
doi = "10.1109/EDTM.2019.8731128",
language = "English",
series = "2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "351--353",
booktitle = "2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019",

}

TY - GEN

T1 - High crystallinity multilayer graphene deposited by a low-temperature CVD using Ni catalyst with applying current

AU - Akimoto, Tomoki

AU - Ueno, Kazuyoshi

PY - 2019/3/1

Y1 - 2019/3/1

N2 - To achieve a low temperature deposition of high crystalline multilayer graphene (MLG), the effect of applying current to the catalyst layer was investigated in MLG-CVD using Ni catalyst. When the substrate temperature was varied at a fixed current, the MLG crystallinity was improved as the temperature became lower, and the G/D ratio of 40 was obtained at 464 °C. By optimizing the precursor flow-rate and deposition time, complete surface coverage was obtained at 490 °C.

AB - To achieve a low temperature deposition of high crystalline multilayer graphene (MLG), the effect of applying current to the catalyst layer was investigated in MLG-CVD using Ni catalyst. When the substrate temperature was varied at a fixed current, the MLG crystallinity was improved as the temperature became lower, and the G/D ratio of 40 was obtained at 464 °C. By optimizing the precursor flow-rate and deposition time, complete surface coverage was obtained at 490 °C.

KW - current

KW - CVD

KW - multilayer graphene

UR - http://www.scopus.com/inward/record.url?scp=85067805776&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85067805776&partnerID=8YFLogxK

U2 - 10.1109/EDTM.2019.8731128

DO - 10.1109/EDTM.2019.8731128

M3 - Conference contribution

AN - SCOPUS:85067805776

T3 - 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019

SP - 351

EP - 353

BT - 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019

PB - Institute of Electrical and Electronics Engineers Inc.

ER -