High crystallinity multilayer graphene deposited by a low-temperature CVD using Ni catalyst with applying current

Tomoki Akimoto, Kazuyoshi Ueno

研究成果: Conference contribution

2 引用 (Scopus)

抜粋

To achieve a low temperature deposition of high crystalline multilayer graphene (MLG), the effect of applying current to the catalyst layer was investigated in MLG-CVD using Ni catalyst. When the substrate temperature was varied at a fixed current, the MLG crystallinity was improved as the temperature became lower, and the G/D ratio of 40 was obtained at 464 °C. By optimizing the precursor flow-rate and deposition time, complete surface coverage was obtained at 490 °C.

元の言語English
ホスト出版物のタイトル2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
出版者Institute of Electrical and Electronics Engineers Inc.
ページ351-353
ページ数3
ISBN(電子版)9781538665084
DOI
出版物ステータスPublished - 2019 3
イベント2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 - Singapore, Singapore
継続期間: 2019 3 122019 3 15

出版物シリーズ

名前2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019

Conference

Conference2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
Singapore
Singapore
期間19/3/1219/3/15

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Hardware and Architecture

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  • これを引用

    Akimoto, T., & Ueno, K. (2019). High crystallinity multilayer graphene deposited by a low-temperature CVD using Ni catalyst with applying current. : 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 (pp. 351-353). [8731128] (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM.2019.8731128