High-electron-mobility AlGaN/AIN/GaN heterostructures grown on 100-mm-diam epitaxial AIN/sapphire templates by metalorganic vapor phase epitaxy

M. Miyoshi, H. Ishikawa, T. Egawa, K. Asai, M. Mouri, T. Shibata, M. Tanaka, O. Oda

研究成果: Article

87 引用 (Scopus)

抜粋

The characterization and growth of high-electron-mobility AlGaN/AlN/GaN heterostructures with 1-nm-thick AlN interfacial layers were investigated. The heterostructures were grown on 100-mm-diam epitaxial AlN/sapphire templates using metalorganic vapor phase epitaxy (MOVPE). The electron mobility of the two-dimensional electron gas (2DEG), which was confined at the GaB channel, was found to be enhanced by the AlN/sapphire templates. It was observed from capacitance-voltage (C-V) and low-temperature Hall measurements that AlN interfacial layers suppressed the carrier penetration from the GaN channel into AlGaN layers and also reduced the alloy disorder and interface roughness scattering.

元の言語English
ページ(範囲)1710-1712
ページ数3
ジャーナルApplied Physics Letters
85
発行部数10
DOI
出版物ステータスPublished - 2004 9 6

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

フィンガープリント High-electron-mobility AlGaN/AIN/GaN heterostructures grown on 100-mm-diam epitaxial AIN/sapphire templates by metalorganic vapor phase epitaxy' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。

  • これを引用