High-electron-mobility AlGaN/AIN/GaN heterostructures grown on 100-mm-diam epitaxial AIN/sapphire templates by metalorganic vapor phase epitaxy

The characterization and growth of high-electron-mobility AlGaN/AlN/GaN heterostructures with 1-nm-thick AlN interfacial layers were investigated. The heterostructures were grown on 100-mm-diam epitaxial AlN/sapphire templates using metalorganic vapor phase epitaxy (MOVPE). The electron mobility of the two-dimensional electron gas (2DEG), which was confined at the GaB channel, was found to be enhanced by the AlN/sapphire templates. It was observed from capacitance-voltage (C-V) and low-temperature Hall measurements that AlN interfacial layers suppressed the carrier penetration from the GaN channel into AlGaN layers and also reduced the alloy disorder and interface roughness scattering.