High-electron-mobility AlGaN/AIN/GaN heterostructures grown on 100-mm-diam epitaxial AIN/sapphire templates by metalorganic vapor phase epitaxy

M. Miyoshi, H. Ishikawa, T. Egawa, K. Asai, M. Mouri, T. Shibata, M. Tanaka, O. Oda

研究成果: Article

87 引用 (Scopus)

抄録

The characterization and growth of high-electron-mobility AlGaN/AlN/GaN heterostructures with 1-nm-thick AlN interfacial layers were investigated. The heterostructures were grown on 100-mm-diam epitaxial AlN/sapphire templates using metalorganic vapor phase epitaxy (MOVPE). The electron mobility of the two-dimensional electron gas (2DEG), which was confined at the GaB channel, was found to be enhanced by the AlN/sapphire templates. It was observed from capacitance-voltage (C-V) and low-temperature Hall measurements that AlN interfacial layers suppressed the carrier penetration from the GaN channel into AlGaN layers and also reduced the alloy disorder and interface roughness scattering.

元の言語English
ページ(範囲)1710-1712
ページ数3
ジャーナルApplied Physics Letters
85
発行部数10
DOI
出版物ステータスPublished - 2004 9 6
外部発表Yes

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electron mobility
vapor phase epitaxy
sapphire
templates
electron gas
roughness
penetration
capacitance
disorders
electric potential
scattering

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

これを引用

High-electron-mobility AlGaN/AIN/GaN heterostructures grown on 100-mm-diam epitaxial AIN/sapphire templates by metalorganic vapor phase epitaxy. / Miyoshi, M.; Ishikawa, H.; Egawa, T.; Asai, K.; Mouri, M.; Shibata, T.; Tanaka, M.; Oda, O.

:: Applied Physics Letters, 巻 85, 番号 10, 06.09.2004, p. 1710-1712.

研究成果: Article

Miyoshi, M. ; Ishikawa, H. ; Egawa, T. ; Asai, K. ; Mouri, M. ; Shibata, T. ; Tanaka, M. ; Oda, O. / High-electron-mobility AlGaN/AIN/GaN heterostructures grown on 100-mm-diam epitaxial AIN/sapphire templates by metalorganic vapor phase epitaxy. :: Applied Physics Letters. 2004 ; 巻 85, 番号 10. pp. 1710-1712.
@article{dc368d7cf89d4f23a82ad4f2cb98818d,
title = "High-electron-mobility AlGaN/AIN/GaN heterostructures grown on 100-mm-diam epitaxial AIN/sapphire templates by metalorganic vapor phase epitaxy",
abstract = "The characterization and growth of high-electron-mobility AlGaN/AlN/GaN heterostructures with 1-nm-thick AlN interfacial layers were investigated. The heterostructures were grown on 100-mm-diam epitaxial AlN/sapphire templates using metalorganic vapor phase epitaxy (MOVPE). The electron mobility of the two-dimensional electron gas (2DEG), which was confined at the GaB channel, was found to be enhanced by the AlN/sapphire templates. It was observed from capacitance-voltage (C-V) and low-temperature Hall measurements that AlN interfacial layers suppressed the carrier penetration from the GaN channel into AlGaN layers and also reduced the alloy disorder and interface roughness scattering.",
author = "M. Miyoshi and H. Ishikawa and T. Egawa and K. Asai and M. Mouri and T. Shibata and M. Tanaka and O. Oda",
year = "2004",
month = "9",
day = "6",
doi = "10.1063/1.1790073",
language = "English",
volume = "85",
pages = "1710--1712",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "10",

}

TY - JOUR

T1 - High-electron-mobility AlGaN/AIN/GaN heterostructures grown on 100-mm-diam epitaxial AIN/sapphire templates by metalorganic vapor phase epitaxy

AU - Miyoshi, M.

AU - Ishikawa, H.

AU - Egawa, T.

AU - Asai, K.

AU - Mouri, M.

AU - Shibata, T.

AU - Tanaka, M.

AU - Oda, O.

PY - 2004/9/6

Y1 - 2004/9/6

N2 - The characterization and growth of high-electron-mobility AlGaN/AlN/GaN heterostructures with 1-nm-thick AlN interfacial layers were investigated. The heterostructures were grown on 100-mm-diam epitaxial AlN/sapphire templates using metalorganic vapor phase epitaxy (MOVPE). The electron mobility of the two-dimensional electron gas (2DEG), which was confined at the GaB channel, was found to be enhanced by the AlN/sapphire templates. It was observed from capacitance-voltage (C-V) and low-temperature Hall measurements that AlN interfacial layers suppressed the carrier penetration from the GaN channel into AlGaN layers and also reduced the alloy disorder and interface roughness scattering.

AB - The characterization and growth of high-electron-mobility AlGaN/AlN/GaN heterostructures with 1-nm-thick AlN interfacial layers were investigated. The heterostructures were grown on 100-mm-diam epitaxial AlN/sapphire templates using metalorganic vapor phase epitaxy (MOVPE). The electron mobility of the two-dimensional electron gas (2DEG), which was confined at the GaB channel, was found to be enhanced by the AlN/sapphire templates. It was observed from capacitance-voltage (C-V) and low-temperature Hall measurements that AlN interfacial layers suppressed the carrier penetration from the GaN channel into AlGaN layers and also reduced the alloy disorder and interface roughness scattering.

UR - http://www.scopus.com/inward/record.url?scp=4944232118&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=4944232118&partnerID=8YFLogxK

U2 - 10.1063/1.1790073

DO - 10.1063/1.1790073

M3 - Article

AN - SCOPUS:4944232118

VL - 85

SP - 1710

EP - 1712

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 10

ER -