High-electron-mobility AlGaN/AlN/GaN heterostructures grown on 100-mm-diam epitaxial AlN/sapphire templates by metalorganic vapor phase epitaxy

M. Miyoshi; H. Ishikawa; T. Egawa; K. Asai; M. Mouri; T. Shibata

High-electron-mobility AlGaN/AlN/GaN heterostructures grown on 100-mm-diam epitaxial AlN/sapphire templates by metalorganic vapor phase epitaxy

M. Miyoshi, H. Ishikawa, T. Egawa, K. Asai, M. Mouri, T. Shibata

機能制御システム専攻

研究成果: Article › 査読

本文言語	English
ページ（範囲）	1710-1712
ジャーナル	Default journal
巻	85
出版ステータス	Published - 2004 9月 1

引用スタイル

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title = "High-electron-mobility AlGaN/AlN/GaN heterostructures grown on 100-mm-diam epitaxial AlN/sapphire templates by metalorganic vapor phase epitaxy",

author = "M. Miyoshi and H. Ishikawa and T. Egawa and K. Asai and M. Mouri and T. Shibata",

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T1 - High-electron-mobility AlGaN/AlN/GaN heterostructures grown on 100-mm-diam epitaxial AlN/sapphire templates by metalorganic vapor phase epitaxy

AU - Miyoshi, M.

AU - Ishikawa, H.

AU - Egawa, T.

AU - Asai, K.

AU - Mouri, M.

AU - Shibata, T.

PY - 2004/9/1

Y1 - 2004/9/1

M3 - Article

VL - 85

SP - 1710

EP - 1712

JO - Default journal

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