AlGaAs/InGaAs HBTs with selectively-regrown extrinsic base regions have been developed. This HBT structure successfully decreases base resistances by 1/4, compared to the conventional HBT structures Maximum oscillation frequency of the HBT is 280 GHz. The newly developed HBTs have opened up applications in millimeter wave ranges. A 26-GHz 3.6-W power amplifier and a DC-60 GHz ultra broad band amplifier were developed by using this new technology.
|出版ステータス||Published - 1997 12月 1|
|イベント||Proceedings of the 1997 Asia-Pacific Microwave Conference, APMC. Part 2 (of 3) - Hong Kong, Hong Kong|
継続期間: 1997 12月 2 → 1997 12月 5
|Other||Proceedings of the 1997 Asia-Pacific Microwave Conference, APMC. Part 2 (of 3)|
|City||Hong Kong, Hong Kong|
|Period||97/12/2 → 97/12/5|
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