High-fmax AlGaAs/InGaAs HBT's and their application in millimeter-wave ranges

Kazuhiko Honjo, Hidenori Shimawaki, Shin'ichi Tanaka, Yasuyuki Suzuki

研究成果: Paper査読

1 被引用数 (Scopus)

抄録

AlGaAs/InGaAs HBTs with selectively-regrown extrinsic base regions have been developed. This HBT structure successfully decreases base resistances by 1/4, compared to the conventional HBT structures Maximum oscillation frequency of the HBT is 280 GHz. The newly developed HBTs have opened up applications in millimeter wave ranges. A 26-GHz 3.6-W power amplifier and a DC-60 GHz ultra broad band amplifier were developed by using this new technology.

本文言語English
ページ733-736
ページ数4
出版ステータスPublished - 1997 12 1
イベントProceedings of the 1997 Asia-Pacific Microwave Conference, APMC. Part 2 (of 3) - Hong Kong, Hong Kong
継続期間: 1997 12 21997 12 5

Other

OtherProceedings of the 1997 Asia-Pacific Microwave Conference, APMC. Part 2 (of 3)
CityHong Kong, Hong Kong
Period97/12/297/12/5

ASJC Scopus subject areas

  • 工学(全般)

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