High-mobility AlGaN/GaN heterostructures grown on sapphire by metal-organic chemical vapor deposition

Guang Yuan Zhao, Hiroyasu Ishikawa, Takashi Egawa, Takashi Jimbo, Masayoshi Umeno

研究成果: Article

21 引用 (Scopus)

抜粋

High-quality AlGaN/GaN heterostructures were grown on sapphire by metal-organic chemical vapor deposition (MOCVD). The factors limiting electron mobility were also investigated using atomic force microscopy, photolumincscence and capacitance-voltage measurements. An unintentionally doped Al0.11Ga0.89N/GaN heterostructure showed two-dimensional electron gas (2DEG) mobilities of 12000 and 9400 cm2/V s at 9 and 77 K, respectively, which are higher than the previously reported values for the same structure grown on either SiC or sapphire by MOCVD. In addition, we found that the 2DEG mobility can be enhanced by increasing the AlGaN layer thickness.

元の言語English
ページ(範囲)1035-1038
ページ数4
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
39
発行部数3 A
出版物ステータスPublished - 2000 12 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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