High performance AlGaN/AlN/GaN HEMTs grown on 100-mm-diameter epitaxial AlN/sapphire templates by MOVPE

M. Miyoshi, A. Imanishi, H. Ishikawa, T. Egawa, K. Asai, M. Mouri, T. Shibata, M. Tanaka, O. Oda

研究成果: Conference contribution

3 被引用数 (Scopus)

抄録

Al0.26Ga0.74N/AlN/GaN heterostructures with 1-nm-thick AlN interfacial layers were grown on 100-mm-diameter epitaxial AlN/sapphire templates and sapphire substrates by metalorganic vapor phase epitaxy (MOVPE). Very high Hall mobilities of approximately 2100 cm 2/Vs at room temperature and approximately 25000 cm2/Vs at 15 K with a 2DEG density of approximately 1 × 1013/cm 2 were uniformly obtained for AlGaN/AlN/GaN heterostructures on 100-mm-diameter epitaxial AlN/sapphire templates. High-electron-mobility transistors (HEMTs) were successfully fabricated on the AlGaN/AlN/GaN film on the epitaxial AlN/sapphire template. The fabricated devices exhibited good pinch-off characteristics and a very high intrinsic trans-conductance of 496 mS/mm.

本文言語English
ホスト出版物のタイトルIEEE Compound Semiconductor Integrated Circuit Symposium; 2004 IEEE CSIC Symposium, 26th Anniversary
ホスト出版物のサブタイトルCompounding Your Chips in Monterey - Technical Digest 2004
ページ193-196
ページ数4
DOI
出版ステータスPublished - 2004 12 1
外部発表はい
イベントIEEE Compound Semiconductor Integrated Circuit Symposium; 2004 IEEE CSIC Symposium - Monterey, CA, United States
継続期間: 2004 10 242004 10 27

出版物シリーズ

名前Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC
ISSN(印刷版)1550-8781

Conference

ConferenceIEEE Compound Semiconductor Integrated Circuit Symposium; 2004 IEEE CSIC Symposium
国/地域United States
CityMonterey, CA
Period04/10/2404/10/27

ASJC Scopus subject areas

  • 工学(全般)

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