TY - GEN
T1 - High performance AlGaN/AlN/GaN HEMTs grown on 100-mm-diameter epitaxial AlN/sapphire templates by MOVPE
AU - Miyoshi, M.
AU - Imanishi, A.
AU - Ishikawa, H.
AU - Egawa, T.
AU - Asai, K.
AU - Mouri, M.
AU - Shibata, T.
AU - Tanaka, M.
AU - Oda, O.
PY - 2004/12/1
Y1 - 2004/12/1
N2 - Al0.26Ga0.74N/AlN/GaN heterostructures with 1-nm-thick AlN interfacial layers were grown on 100-mm-diameter epitaxial AlN/sapphire templates and sapphire substrates by metalorganic vapor phase epitaxy (MOVPE). Very high Hall mobilities of approximately 2100 cm 2/Vs at room temperature and approximately 25000 cm2/Vs at 15 K with a 2DEG density of approximately 1 × 1013/cm 2 were uniformly obtained for AlGaN/AlN/GaN heterostructures on 100-mm-diameter epitaxial AlN/sapphire templates. High-electron-mobility transistors (HEMTs) were successfully fabricated on the AlGaN/AlN/GaN film on the epitaxial AlN/sapphire template. The fabricated devices exhibited good pinch-off characteristics and a very high intrinsic trans-conductance of 496 mS/mm.
AB - Al0.26Ga0.74N/AlN/GaN heterostructures with 1-nm-thick AlN interfacial layers were grown on 100-mm-diameter epitaxial AlN/sapphire templates and sapphire substrates by metalorganic vapor phase epitaxy (MOVPE). Very high Hall mobilities of approximately 2100 cm 2/Vs at room temperature and approximately 25000 cm2/Vs at 15 K with a 2DEG density of approximately 1 × 1013/cm 2 were uniformly obtained for AlGaN/AlN/GaN heterostructures on 100-mm-diameter epitaxial AlN/sapphire templates. High-electron-mobility transistors (HEMTs) were successfully fabricated on the AlGaN/AlN/GaN film on the epitaxial AlN/sapphire template. The fabricated devices exhibited good pinch-off characteristics and a very high intrinsic trans-conductance of 496 mS/mm.
KW - 100-mm-diameter wafer
KW - AlGaN/AlN/GaN
KW - Epitaxial AlN/sapphire template
KW - HEMT
UR - http://www.scopus.com/inward/record.url?scp=21644486254&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=21644486254&partnerID=8YFLogxK
U2 - 10.1109/CSICS.2004.1392534
DO - 10.1109/CSICS.2004.1392534
M3 - Conference contribution
AN - SCOPUS:21644486254
SN - 0780386167
T3 - Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC
SP - 193
EP - 196
BT - IEEE Compound Semiconductor Integrated Circuit Symposium; 2004 IEEE CSIC Symposium, 26th Anniversary
T2 - IEEE Compound Semiconductor Integrated Circuit Symposium; 2004 IEEE CSIC Symposium
Y2 - 24 October 2004 through 27 October 2004
ER -