High performance AlGaN/AlN/GaN HEMTs grown on 100-mm-diameter epitaxial AlN/sapphire templates by MOVPE

M. Miyoshi; A. Imanishi; H. Ishikawa; T. Egawa; K. Asai; M. Mouri; T. Shibata; M. Tanaka; O. Oda

doi:10.1109/CSICS.2004.1392534

High performance AlGaN/AlN/GaN HEMTs grown on 100-mm-diameter epitaxial AlN/sapphire templates by MOVPE

M. Miyoshi, A. Imanishi, H. Ishikawa, T. Egawa, K. Asai, M. Mouri, T. Shibata, M. Tanaka, O. Oda

研究成果: Conference contribution

3 被引用数 (Scopus)

抄録

Al_0.26Ga_0.74N/AlN/GaN heterostructures with 1-nm-thick AlN interfacial layers were grown on 100-mm-diameter epitaxial AlN/sapphire templates and sapphire substrates by metalorganic vapor phase epitaxy (MOVPE). Very high Hall mobilities of approximately 2100 cm ²/Vs at room temperature and approximately 25000 cm²/Vs at 15 K with a 2DEG density of approximately 1 × 10¹³/cm ² were uniformly obtained for AlGaN/AlN/GaN heterostructures on 100-mm-diameter epitaxial AlN/sapphire templates. High-electron-mobility transistors (HEMTs) were successfully fabricated on the AlGaN/AlN/GaN film on the epitaxial AlN/sapphire template. The fabricated devices exhibited good pinch-off characteristics and a very high intrinsic trans-conductance of 496 mS/mm.

本文言語	English
ホスト出版物のタイトル	IEEE Compound Semiconductor Integrated Circuit Symposium; 2004 IEEE CSIC Symposium, 26th Anniversary
ホスト出版物のサブタイトル	Compounding Your Chips in Monterey - Technical Digest 2004
ページ	193-196
ページ数	4
DOI	https://doi.org/10.1109/CSICS.2004.1392534
出版ステータス	Published - 2004 12 1
外部発表	はい
イベント	IEEE Compound Semiconductor Integrated Circuit Symposium; 2004 IEEE CSIC Symposium - Monterey, CA, United States 継続期間: 2004 10 24 → 2004 10 27

出版物シリーズ

名前	Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC
ISSN（印刷版）	1550-8781

Conference

Conference	IEEE Compound Semiconductor Integrated Circuit Symposium; 2004 IEEE CSIC Symposium
国/地域	United States
City	Monterey, CA
Period	04/10/24 → 04/10/27

ASJC Scopus subject areas

工学（全般）

文献へのアクセス

10.1109/CSICS.2004.1392534

他のファイルとリンク

引用スタイル

Miyoshi, M., Imanishi, A., Ishikawa, H., Egawa, T., Asai, K., Mouri, M., Shibata, T., Tanaka, M., & Oda, O. (2004). High performance AlGaN/AlN/GaN HEMTs grown on 100-mm-diameter epitaxial AlN/sapphire templates by MOVPE. In IEEE Compound Semiconductor Integrated Circuit Symposium; 2004 IEEE CSIC Symposium, 26th Anniversary: Compounding Your Chips in Monterey - Technical Digest 2004 (pp. 193-196). (Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC). https://doi.org/10.1109/CSICS.2004.1392534

High performance AlGaN/AlN/GaN HEMTs grown on 100-mm-diameter epitaxial AlN/sapphire templates by MOVPE. / Miyoshi, M.; Imanishi, A.; Ishikawa, H.; Egawa, T.; Asai, K.; Mouri, M.; Shibata, T.; Tanaka, M.; Oda, O.

IEEE Compound Semiconductor Integrated Circuit Symposium; 2004 IEEE CSIC Symposium, 26th Anniversary: Compounding Your Chips in Monterey - Technical Digest 2004. 2004. p. 193-196 (Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC).

研究成果: Conference contribution

Miyoshi, M, Imanishi, A, Ishikawa, H, Egawa, T, Asai, K, Mouri, M, Shibata, T, Tanaka, M & Oda, O 2004, High performance AlGaN/AlN/GaN HEMTs grown on 100-mm-diameter epitaxial AlN/sapphire templates by MOVPE. in IEEE Compound Semiconductor Integrated Circuit Symposium; 2004 IEEE CSIC Symposium, 26th Anniversary: Compounding Your Chips in Monterey - Technical Digest 2004. Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC, pp. 193-196, IEEE Compound Semiconductor Integrated Circuit Symposium; 2004 IEEE CSIC Symposium, Monterey, CA, United States, 04/10/24. https://doi.org/10.1109/CSICS.2004.1392534

Miyoshi M, Imanishi A, Ishikawa H, Egawa T, Asai K, Mouri M et al. High performance AlGaN/AlN/GaN HEMTs grown on 100-mm-diameter epitaxial AlN/sapphire templates by MOVPE. In IEEE Compound Semiconductor Integrated Circuit Symposium; 2004 IEEE CSIC Symposium, 26th Anniversary: Compounding Your Chips in Monterey - Technical Digest 2004. 2004. p. 193-196. (Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC). https://doi.org/10.1109/CSICS.2004.1392534

Miyoshi, M. ; Imanishi, A. ; Ishikawa, H. ; Egawa, T. ; Asai, K. ; Mouri, M. ; Shibata, T. ; Tanaka, M. ; Oda, O. / High performance AlGaN/AlN/GaN HEMTs grown on 100-mm-diameter epitaxial AlN/sapphire templates by MOVPE. IEEE Compound Semiconductor Integrated Circuit Symposium; 2004 IEEE CSIC Symposium, 26th Anniversary: Compounding Your Chips in Monterey - Technical Digest 2004. 2004. pp. 193-196 (Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC).

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abstract = "Al0.26Ga0.74N/AlN/GaN heterostructures with 1-nm-thick AlN interfacial layers were grown on 100-mm-diameter epitaxial AlN/sapphire templates and sapphire substrates by metalorganic vapor phase epitaxy (MOVPE). Very high Hall mobilities of approximately 2100 cm 2/Vs at room temperature and approximately 25000 cm2/Vs at 15 K with a 2DEG density of approximately 1 × 1013/cm 2 were uniformly obtained for AlGaN/AlN/GaN heterostructures on 100-mm-diameter epitaxial AlN/sapphire templates. High-electron-mobility transistors (HEMTs) were successfully fabricated on the AlGaN/AlN/GaN film on the epitaxial AlN/sapphire template. The fabricated devices exhibited good pinch-off characteristics and a very high intrinsic trans-conductance of 496 mS/mm.",

keywords = "100-mm-diameter wafer, AlGaN/AlN/GaN, Epitaxial AlN/sapphire template, HEMT",

author = "M. Miyoshi and A. Imanishi and H. Ishikawa and T. Egawa and K. Asai and M. Mouri and T. Shibata and M. Tanaka and O. Oda",

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AU - Miyoshi, M.

AU - Imanishi, A.

AU - Ishikawa, H.

AU - Egawa, T.

AU - Asai, K.

AU - Mouri, M.

AU - Shibata, T.

AU - Tanaka, M.

AU - Oda, O.

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N2 - Al0.26Ga0.74N/AlN/GaN heterostructures with 1-nm-thick AlN interfacial layers were grown on 100-mm-diameter epitaxial AlN/sapphire templates and sapphire substrates by metalorganic vapor phase epitaxy (MOVPE). Very high Hall mobilities of approximately 2100 cm 2/Vs at room temperature and approximately 25000 cm2/Vs at 15 K with a 2DEG density of approximately 1 × 1013/cm 2 were uniformly obtained for AlGaN/AlN/GaN heterostructures on 100-mm-diameter epitaxial AlN/sapphire templates. High-electron-mobility transistors (HEMTs) were successfully fabricated on the AlGaN/AlN/GaN film on the epitaxial AlN/sapphire template. The fabricated devices exhibited good pinch-off characteristics and a very high intrinsic trans-conductance of 496 mS/mm.

AB - Al0.26Ga0.74N/AlN/GaN heterostructures with 1-nm-thick AlN interfacial layers were grown on 100-mm-diameter epitaxial AlN/sapphire templates and sapphire substrates by metalorganic vapor phase epitaxy (MOVPE). Very high Hall mobilities of approximately 2100 cm 2/Vs at room temperature and approximately 25000 cm2/Vs at 15 K with a 2DEG density of approximately 1 × 1013/cm 2 were uniformly obtained for AlGaN/AlN/GaN heterostructures on 100-mm-diameter epitaxial AlN/sapphire templates. High-electron-mobility transistors (HEMTs) were successfully fabricated on the AlGaN/AlN/GaN film on the epitaxial AlN/sapphire template. The fabricated devices exhibited good pinch-off characteristics and a very high intrinsic trans-conductance of 496 mS/mm.

KW - 100-mm-diameter wafer

KW - AlGaN/AlN/GaN

KW - Epitaxial AlN/sapphire template

KW - HEMT

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BT - IEEE Compound Semiconductor Integrated Circuit Symposium; 2004 IEEE CSIC Symposium, 26th Anniversary

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High performance AlGaN/AlN/GaN HEMTs grown on 100-mm-diameter epitaxial AlN/sapphire templates by MOVPE

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