High performance AlGaN/GaN HEMTs with recessed gate

Y. Sano, J. Mita, T. Yamada, T. Makita, K. Kaifu, Hiroyasu Ishikawa, T. Egawa, T. Jimbo

研究成果: Article

抄録

High performance AlGaN / GaN high electron mobility transistors with recessed gate have been successfally fabricated on sapphire substrate. The HEMT with 0.5 um gate length exhibited excellent current saturation properties without no kink effect and no current degradation. The maximum extrinsic trans-conductance was as high as 327 mS/mm. Effective electron velocity of the HEMT with 0.5um gate length calculated from intrinsic fT (49.7GHz) was as high as 1.56 × 107 cm/sec. To our knowledge, this is the fastest value of any GaN-based FETs ever reported. Moreover, the HEMTs with T shape recessed gate of 0.21um gate length was also fabricated and exhibited excellent high frequency performances. A maximum unity current cut-off frequency fT of 57 GHz and a maximum oscillation frequency fmax of 108 GHz were obtained.

元の言語English
ページ(範囲)1511-1514
ページ数4
ジャーナルMaterials Science Forum
389-393
発行部数2
出版物ステータスPublished - 2002
外部発表Yes

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Gates (transistor)
High electron mobility transistors
high electron mobility transistors
Aluminum Oxide
Cutoff frequency
T shape
Field effect transistors
Sapphire
unity
sapphire
Degradation
cut-off
field effect transistors
aluminum gallium nitride
Electrons
degradation
saturation
Substrates
oscillations
electrons

ASJC Scopus subject areas

  • Materials Science(all)

これを引用

Sano, Y., Mita, J., Yamada, T., Makita, T., Kaifu, K., Ishikawa, H., ... Jimbo, T. (2002). High performance AlGaN/GaN HEMTs with recessed gate. Materials Science Forum, 389-393(2), 1511-1514.

High performance AlGaN/GaN HEMTs with recessed gate. / Sano, Y.; Mita, J.; Yamada, T.; Makita, T.; Kaifu, K.; Ishikawa, Hiroyasu; Egawa, T.; Jimbo, T.

:: Materials Science Forum, 巻 389-393, 番号 2, 2002, p. 1511-1514.

研究成果: Article

Sano, Y, Mita, J, Yamada, T, Makita, T, Kaifu, K, Ishikawa, H, Egawa, T & Jimbo, T 2002, 'High performance AlGaN/GaN HEMTs with recessed gate', Materials Science Forum, 巻. 389-393, 番号 2, pp. 1511-1514.
Sano Y, Mita J, Yamada T, Makita T, Kaifu K, Ishikawa H その他. High performance AlGaN/GaN HEMTs with recessed gate. Materials Science Forum. 2002;389-393(2):1511-1514.
Sano, Y. ; Mita, J. ; Yamada, T. ; Makita, T. ; Kaifu, K. ; Ishikawa, Hiroyasu ; Egawa, T. ; Jimbo, T. / High performance AlGaN/GaN HEMTs with recessed gate. :: Materials Science Forum. 2002 ; 巻 389-393, 番号 2. pp. 1511-1514.
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T1 - High performance AlGaN/GaN HEMTs with recessed gate

AU - Sano, Y.

AU - Mita, J.

AU - Yamada, T.

AU - Makita, T.

AU - Kaifu, K.

AU - Ishikawa, Hiroyasu

AU - Egawa, T.

AU - Jimbo, T.

PY - 2002

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N2 - High performance AlGaN / GaN high electron mobility transistors with recessed gate have been successfally fabricated on sapphire substrate. The HEMT with 0.5 um gate length exhibited excellent current saturation properties without no kink effect and no current degradation. The maximum extrinsic trans-conductance was as high as 327 mS/mm. Effective electron velocity of the HEMT with 0.5um gate length calculated from intrinsic fT (49.7GHz) was as high as 1.56 × 107 cm/sec. To our knowledge, this is the fastest value of any GaN-based FETs ever reported. Moreover, the HEMTs with T shape recessed gate of 0.21um gate length was also fabricated and exhibited excellent high frequency performances. A maximum unity current cut-off frequency fT of 57 GHz and a maximum oscillation frequency fmax of 108 GHz were obtained.

AB - High performance AlGaN / GaN high electron mobility transistors with recessed gate have been successfally fabricated on sapphire substrate. The HEMT with 0.5 um gate length exhibited excellent current saturation properties without no kink effect and no current degradation. The maximum extrinsic trans-conductance was as high as 327 mS/mm. Effective electron velocity of the HEMT with 0.5um gate length calculated from intrinsic fT (49.7GHz) was as high as 1.56 × 107 cm/sec. To our knowledge, this is the fastest value of any GaN-based FETs ever reported. Moreover, the HEMTs with T shape recessed gate of 0.21um gate length was also fabricated and exhibited excellent high frequency performances. A maximum unity current cut-off frequency fT of 57 GHz and a maximum oscillation frequency fmax of 108 GHz were obtained.

KW - AlGaN

KW - GaN

KW - HEMT

KW - High Frequency

KW - Microwave

KW - Recessed Gate

KW - Sapphire

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