High performance AlGaN/GaN HEMTs with recessed gate

Y. Sano, J. Mita, T. Yamada, T. Makita, K. Kaifu, H. Ishikawa, T. Egawa, T. Jimbo

研究成果: Conference contribution

抄録

High performance AIGaN/GaN high electron mobility transistors with recessed gate have been successfully fabricated on sapphire substrate. The HEMT with 0.5 urn gate length exhibited excellent current saturation properties without no kink effect and no current degradation. The maximum extrinsic trans-conductance was as high as 327 mS/mm. Effective electron velocity of the HEMT with 0.5um gate length calculated from intrinsic fT (49.7GHz) was as high as 1.56 x 107 cm/sec. To our knowledge, this is the fastest value of any GaN-based FETs ever reported. Moreover, the HEMTs with T shape recessed gate of 0.2lum gate length was also fabricated and exhibited excellent high frequency performances. A maximum unity current cut-off frequency fT of 57 GHz and a maximum oscillation frequency fmax of 108 GHz were obtained.

本文言語English
ホスト出版物のタイトルSilicon Carbide and Related Materials 2001
編集者S. Yoshida, S. Nishino, H. Harima, T. Kimoto
出版社Trans Tech Publications Ltd
ページ1511-1514
ページ数4
ISBN(印刷版)9780878498949
DOI
出版ステータスPublished - 2002 1月 1
外部発表はい
イベントInternational Conference on Silicon Carbide and Related Materials, ICSCRM 2001 - Tsukuba, Japan
継続期間: 2001 10月 282001 11月 2

出版物シリーズ

名前Materials Science Forum
389-393
ISSN(印刷版)0255-5476
ISSN(電子版)1662-9752

Conference

ConferenceInternational Conference on Silicon Carbide and Related Materials, ICSCRM 2001
国/地域Japan
CityTsukuba
Period01/10/2801/11/2

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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