High performance AlGaN/GaN HEMTs with recessed gate on sapphire substrate

Y. Sano, T. Yamada, J. Mita, K. Kaifu, Hiroyasu Ishikawa, T. Egawa, M. Umeno

研究成果: Conference contribution

3 引用 (Scopus)

抄録

High electron mobility transistor (HEMT) with recessed gates was fabricated on sapphire substrate. Reactive ion etching was used for gate recess etching and gate metal was deposited on recessed area. The HEMT showed excellent current saturation with no current degradation. The transconductance of recessed gate HEMT was found to be three times larger than that of non-recessed HEMT.

元の言語English
ホスト出版物のタイトルAnnual Device Research Conference Digest
ページ81-82
ページ数2
出版物ステータスPublished - 2001
外部発表Yes
イベントDevice Research Conference (DRC) - Notre Dame, IN
継続期間: 2001 6 252001 6 27

Other

OtherDevice Research Conference (DRC)
Notre Dame, IN
期間01/6/2501/6/27

Fingerprint

Gates (transistor)
High electron mobility transistors
Sapphire
Substrates
Reactive ion etching
Transconductance
Etching
Degradation
Metals

ASJC Scopus subject areas

  • Engineering(all)

これを引用

Sano, Y., Yamada, T., Mita, J., Kaifu, K., Ishikawa, H., Egawa, T., & Umeno, M. (2001). High performance AlGaN/GaN HEMTs with recessed gate on sapphire substrate. : Annual Device Research Conference Digest (pp. 81-82)

High performance AlGaN/GaN HEMTs with recessed gate on sapphire substrate. / Sano, Y.; Yamada, T.; Mita, J.; Kaifu, K.; Ishikawa, Hiroyasu; Egawa, T.; Umeno, M.

Annual Device Research Conference Digest. 2001. p. 81-82.

研究成果: Conference contribution

Sano, Y, Yamada, T, Mita, J, Kaifu, K, Ishikawa, H, Egawa, T & Umeno, M 2001, High performance AlGaN/GaN HEMTs with recessed gate on sapphire substrate. : Annual Device Research Conference Digest. pp. 81-82, Device Research Conference (DRC), Notre Dame, IN, 01/6/25.
Sano Y, Yamada T, Mita J, Kaifu K, Ishikawa H, Egawa T その他. High performance AlGaN/GaN HEMTs with recessed gate on sapphire substrate. : Annual Device Research Conference Digest. 2001. p. 81-82
Sano, Y. ; Yamada, T. ; Mita, J. ; Kaifu, K. ; Ishikawa, Hiroyasu ; Egawa, T. ; Umeno, M. / High performance AlGaN/GaN HEMTs with recessed gate on sapphire substrate. Annual Device Research Conference Digest. 2001. pp. 81-82
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AU - Egawa, T.

AU - Umeno, M.

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