抄録
High electron mobility transistor (HEMT) with recessed gates was fabricated on sapphire substrate. Reactive ion etching was used for gate recess etching and gate metal was deposited on recessed area. The HEMT showed excellent current saturation with no current degradation. The transconductance of recessed gate HEMT was found to be three times larger than that of non-recessed HEMT.
| 元の言語 | English |
|---|---|
| ホスト出版物のタイトル | Annual Device Research Conference Digest |
| ページ | 81-82 |
| ページ数 | 2 |
| 出版物ステータス | Published - 2001 |
| 外部発表 | Yes |
| イベント | Device Research Conference (DRC) - Notre Dame, IN 継続期間: 2001 6 25 → 2001 6 27 |
Other
| Other | Device Research Conference (DRC) |
|---|---|
| 市 | Notre Dame, IN |
| 期間 | 01/6/25 → 01/6/27 |
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ASJC Scopus subject areas
- Engineering(all)
これを引用
High performance AlGaN/GaN HEMTs with recessed gate on sapphire substrate. / Sano, Y.; Yamada, T.; Mita, J.; Kaifu, K.; Ishikawa, Hiroyasu; Egawa, T.; Umeno, M.
Annual Device Research Conference Digest. 2001. p. 81-82.研究成果: Conference contribution
}
TY - GEN
T1 - High performance AlGaN/GaN HEMTs with recessed gate on sapphire substrate
AU - Sano, Y.
AU - Yamada, T.
AU - Mita, J.
AU - Kaifu, K.
AU - Ishikawa, Hiroyasu
AU - Egawa, T.
AU - Umeno, M.
PY - 2001
Y1 - 2001
N2 - High electron mobility transistor (HEMT) with recessed gates was fabricated on sapphire substrate. Reactive ion etching was used for gate recess etching and gate metal was deposited on recessed area. The HEMT showed excellent current saturation with no current degradation. The transconductance of recessed gate HEMT was found to be three times larger than that of non-recessed HEMT.
AB - High electron mobility transistor (HEMT) with recessed gates was fabricated on sapphire substrate. Reactive ion etching was used for gate recess etching and gate metal was deposited on recessed area. The HEMT showed excellent current saturation with no current degradation. The transconductance of recessed gate HEMT was found to be three times larger than that of non-recessed HEMT.
UR - http://www.scopus.com/inward/record.url?scp=0034875419&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0034875419&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:0034875419
SP - 81
EP - 82
BT - Annual Device Research Conference Digest
ER -