抄録
High electron mobility transistor (HEMT) with recessed gates was fabricated on sapphire substrate. Reactive ion etching was used for gate recess etching and gate metal was deposited on recessed area. The HEMT showed excellent current saturation with no current degradation. The transconductance of recessed gate HEMT was found to be three times larger than that of non-recessed HEMT.
本文言語 | English |
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ページ | 81-82 |
ページ数 | 2 |
出版ステータス | Published - 2001 1月 1 |
外部発表 | はい |
イベント | Device Research Conference (DRC) - Notre Dame, IN, United States 継続期間: 2001 6月 25 → 2001 6月 27 |
Conference
Conference | Device Research Conference (DRC) |
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国/地域 | United States |
City | Notre Dame, IN |
Period | 01/6/25 → 01/6/27 |
ASJC Scopus subject areas
- 工学(全般)