High performance AlGaN/GaN HEMTs with recessed gate on sapphire substrate

Y. Sano, T. Yamada, J. Mita, K. Kaifu, H. Ishikawa, T. Egawa, M. Umeno

研究成果: Paper査読

3 被引用数 (Scopus)

抄録

High electron mobility transistor (HEMT) with recessed gates was fabricated on sapphire substrate. Reactive ion etching was used for gate recess etching and gate metal was deposited on recessed area. The HEMT showed excellent current saturation with no current degradation. The transconductance of recessed gate HEMT was found to be three times larger than that of non-recessed HEMT.

本文言語English
ページ81-82
ページ数2
出版ステータスPublished - 2001 1 1
外部発表はい
イベントDevice Research Conference (DRC) - Notre Dame, IN, United States
継続期間: 2001 6 252001 6 27

Conference

ConferenceDevice Research Conference (DRC)
国/地域United States
CityNotre Dame, IN
Period01/6/2501/6/27

ASJC Scopus subject areas

  • 工学(全般)

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