High performance AlGaN/GaN HEMTs with recessed gate on sapphire substrate

Y. Sano; T. Yamada; J. Mita; K. Kaifu; H. Ishikawa; T. Egawa; M. Umeno

High performance AlGaN/GaN HEMTs with recessed gate on sapphire substrate

Y. Sano, T. Yamada, J. Mita, K. Kaifu, H. Ishikawa, T. Egawa, M. Umeno

研究成果: Paper › 査読

抄録

High electron mobility transistor (HEMT) with recessed gates was fabricated on sapphire substrate. Reactive ion etching was used for gate recess etching and gate metal was deposited on recessed area. The HEMT showed excellent current saturation with no current degradation. The transconductance of recessed gate HEMT was found to be three times larger than that of non-recessed HEMT.

本文言語	English
ページ	81-82
ページ数	2
出版ステータス	Published - 2001 1 1
外部発表	はい
イベント	Device Research Conference (DRC) - Notre Dame, IN, United States 継続期間: 2001 6 25 → 2001 6 27

Conference

Conference	Device Research Conference (DRC)
国/地域	United States
City	Notre Dame, IN
Period	01/6/25 → 01/6/27

ASJC Scopus subject areas

工学（全般）

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引用スタイル

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title = "High performance AlGaN/GaN HEMTs with recessed gate on sapphire substrate",

abstract = "High electron mobility transistor (HEMT) with recessed gates was fabricated on sapphire substrate. Reactive ion etching was used for gate recess etching and gate metal was deposited on recessed area. The HEMT showed excellent current saturation with no current degradation. The transconductance of recessed gate HEMT was found to be three times larger than that of non-recessed HEMT.",

author = "Y. Sano and T. Yamada and J. Mita and K. Kaifu and H. Ishikawa and T. Egawa and M. Umeno",

year = "2001",

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language = "English",

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note = "Device Research Conference (DRC) ; Conference date: 25-06-2001 Through 27-06-2001",

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TY - CONF

T1 - High performance AlGaN/GaN HEMTs with recessed gate on sapphire substrate

AU - Sano, Y.

AU - Yamada, T.

AU - Mita, J.

AU - Kaifu, K.

AU - Ishikawa, H.

AU - Egawa, T.

AU - Umeno, M.

PY - 2001/1/1

Y1 - 2001/1/1

N2 - High electron mobility transistor (HEMT) with recessed gates was fabricated on sapphire substrate. Reactive ion etching was used for gate recess etching and gate metal was deposited on recessed area. The HEMT showed excellent current saturation with no current degradation. The transconductance of recessed gate HEMT was found to be three times larger than that of non-recessed HEMT.

AB - High electron mobility transistor (HEMT) with recessed gates was fabricated on sapphire substrate. Reactive ion etching was used for gate recess etching and gate metal was deposited on recessed area. The HEMT showed excellent current saturation with no current degradation. The transconductance of recessed gate HEMT was found to be three times larger than that of non-recessed HEMT.

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UR - http://www.scopus.com/inward/citedby.url?scp=0034875419&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0034875419

SP - 81

EP - 82

T2 - Device Research Conference (DRC)

Y2 - 25 June 2001 through 27 June 2001

ER -

High performance AlGaN/GaN HEMTs with recessed gate on sapphire substrate

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Conference

ASJC Scopus subject areas

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