High electron mobility transistor (HEMT) with recessed gates was fabricated on sapphire substrate. Reactive ion etching was used for gate recess etching and gate metal was deposited on recessed area. The HEMT showed excellent current saturation with no current degradation. The transconductance of recessed gate HEMT was found to be three times larger than that of non-recessed HEMT.
|出版ステータス||Published - 2001 1月 1|
|イベント||Device Research Conference (DRC) - Notre Dame, IN, United States|
継続期間: 2001 6月 25 → 2001 6月 27
|Conference||Device Research Conference (DRC)|
|City||Notre Dame, IN|
|Period||01/6/25 → 01/6/27|
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