High performance AlGaN/GaN HEMTs with recessed gate on sapphire substrate

Y. Sano, T. Yamada, J. Mita, K. Kaifu, H. Ishikawa, T. Egawa, M. Umeno

研究成果: Paper

3 引用 （Scopus）

抜粋

High electron mobility transistor (HEMT) with recessed gates was fabricated on sapphire substrate. Reactive ion etching was used for gate recess etching and gate metal was deposited on recessed area. The HEMT showed excellent current saturation with no current degradation. The transconductance of recessed gate HEMT was found to be three times larger than that of non-recessed HEMT.

元の言語English
ページ81-82
ページ数2
出版物ステータスPublished - 2001 1 1
イベントDevice Research Conference (DRC) - Notre Dame, IN, United States
継続期間: 2001 6 25 → 2001 6 27

Conference

ConferenceDevice Research Conference (DRC)
国United States
市Notre Dame, IN
期間01/6/25 → 01/6/27

ASJC Scopus subject areas

  • Engineering(all)

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    Sano, Y., Yamada, T., Mita, J., Kaifu, K., Ishikawa, H., Egawa, T., & Umeno, M. (2001). High performance AlGaN/GaN HEMTs with recessed gate on sapphire substrate. 81-82. 論文発表場所 Device Research Conference (DRC), Notre Dame, IN, United States.