AlGaAs/GaAs power HBTs have been developed for operation in the 26 GHz band. The HBTs were designed for improved thermal stability and power gain. A common-base HBT with a 480-μm2 emitter area achieved a 0.65 W CW output power with 34% collector efficiency, 16% power-added efficiency, and 6 dB linear power gain at 26.85 GHz. A 960-μm2 CB HBT produced an output power of 0.8 W with 5.6 dB linear power gain at 26.2 GHz.
|出版ステータス||Published - 1995 12 1|
|イベント||Proceedings of the 17th Annual IEEE Gallium Arsenide Integrated Circuit Symposium - San Diego, CA, USA|
継続期間: 1995 10 29 → 1995 11 1
|Other||Proceedings of the 17th Annual IEEE Gallium Arsenide Integrated Circuit Symposium|
|City||San Diego, CA, USA|
|Period||95/10/29 → 95/11/1|
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