High power AlGaAs/GaAs HBTs for Ka-band operation

Chang Woo Kim; Shin'ichi Tanaka; Yasushi Amamiya; Naoki Furuhata; Hidenori Shimawaki; Yosuke Miyoshi; Norio Goto; Kazuhiko Honjo

High power AlGaAs/GaAs HBTs for Ka-band operation

Chang Woo Kim, Shin'ichi Tanaka, Yasushi Amamiya, Naoki Furuhata, Hidenori Shimawaki, Yosuke Miyoshi, Norio Goto, Kazuhiko Honjo

研究成果: Paper › 査読

2 被引用数 (Scopus)

抄録

AlGaAs/GaAs power HBTs have been developed for operation in the 26 GHz band. The HBTs were designed for improved thermal stability and power gain. A common-base HBT with a 480-μm² emitter area achieved a 0.65 W CW output power with 34% collector efficiency, 16% power-added efficiency, and 6 dB linear power gain at 26.85 GHz. A 960-μm² CB HBT produced an output power of 0.8 W with 5.6 dB linear power gain at 26.2 GHz.

本文言語	English
ページ	159-162
ページ数	4
出版ステータス	Published - 1995 12月 1
イベント	Proceedings of the 17th Annual IEEE Gallium Arsenide Integrated Circuit Symposium - San Diego, CA, USA 継続期間: 1995 10月 29 → 1995 11月 1

Other

Other	Proceedings of the 17th Annual IEEE Gallium Arsenide Integrated Circuit Symposium
City	San Diego, CA, USA
Period	95/10/29 → 95/11/1

ASJC Scopus subject areas

電子工学および電気工学

他のファイルとリンク

引用スタイル

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title = "High power AlGaAs/GaAs HBTs for Ka-band operation",

abstract = "AlGaAs/GaAs power HBTs have been developed for operation in the 26 GHz band. The HBTs were designed for improved thermal stability and power gain. A common-base HBT with a 480-μm2 emitter area achieved a 0.65 W CW output power with 34% collector efficiency, 16% power-added efficiency, and 6 dB linear power gain at 26.85 GHz. A 960-μm2 CB HBT produced an output power of 0.8 W with 5.6 dB linear power gain at 26.2 GHz.",

author = "Kim, {Chang Woo} and Shin'ichi Tanaka and Yasushi Amamiya and Naoki Furuhata and Hidenori Shimawaki and Yosuke Miyoshi and Norio Goto and Kazuhiko Honjo",

year = "1995",

month = dec,

day = "1",

language = "English",

pages = "159--162",

note = "Proceedings of the 17th Annual IEEE Gallium Arsenide Integrated Circuit Symposium ; Conference date: 29-10-1995 Through 01-11-1995",

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T1 - High power AlGaAs/GaAs HBTs for Ka-band operation

AU - Kim, Chang Woo

AU - Tanaka, Shin'ichi

AU - Amamiya, Yasushi

AU - Furuhata, Naoki

AU - Shimawaki, Hidenori

AU - Miyoshi, Yosuke

AU - Goto, Norio

AU - Honjo, Kazuhiko

PY - 1995/12/1

Y1 - 1995/12/1

N2 - AlGaAs/GaAs power HBTs have been developed for operation in the 26 GHz band. The HBTs were designed for improved thermal stability and power gain. A common-base HBT with a 480-μm2 emitter area achieved a 0.65 W CW output power with 34% collector efficiency, 16% power-added efficiency, and 6 dB linear power gain at 26.85 GHz. A 960-μm2 CB HBT produced an output power of 0.8 W with 5.6 dB linear power gain at 26.2 GHz.

AB - AlGaAs/GaAs power HBTs have been developed for operation in the 26 GHz band. The HBTs were designed for improved thermal stability and power gain. A common-base HBT with a 480-μm2 emitter area achieved a 0.65 W CW output power with 34% collector efficiency, 16% power-added efficiency, and 6 dB linear power gain at 26.85 GHz. A 960-μm2 CB HBT produced an output power of 0.8 W with 5.6 dB linear power gain at 26.2 GHz.

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M3 - Paper

AN - SCOPUS:0029484569

SP - 159

EP - 162

T2 - Proceedings of the 17th Annual IEEE Gallium Arsenide Integrated Circuit Symposium

Y2 - 29 October 1995 through 1 November 1995

ER -

High power AlGaAs/GaAs HBTs for Ka-band operation

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ASJC Scopus subject areas

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