High-power, high-efficiency cell design for 26 GHz HBT power amplifier

S. Tanaka, S. Murakami, Y. Amamiya, H. Shimawaki, N. Furuhata, N. Goto, K. Honjo, Y. Ishida, Y. Saito, K. Yamamoto, M. Yajima, R. Temino, Y. Hisada

研究成果: Conference article査読

6 被引用数 (Scopus)

抄録

We describe a 6-chip combination HBT power amplifier and a single-cell chip with excellent power-added efficiency (PAE) and power density at 24-26 GHz. The power amplifier, based on our conventional chip design, exhibited 2.2 W output power with 19% PAE and 5 dB linear gain. To further improve the efficiency and power-density, various types of HBT cells were characterized. The optimum cell (184 μm2) exhibited 740 mW output power equivalent to power density of 4.0 mW/μm2, while a record high PAE of 42% was obtained. These results compare well with the best data reported at lower frequency bands (<18 GHz), thereby showing great potential for high-power, high-efficiency HBTs in near mmWave bands.

本文言語English
ページ(範囲)843-846
ページ数4
ジャーナルIEEE MTT-S International Microwave Symposium Digest
2
出版ステータスPublished - 1996 1 1
イベントProceedings of the 1996 IEEE MTT-S International Microwave Symposium Digest. Part 1 (of 3) - San Franscisco, CA, USA
継続期間: 1996 6 171996 6 21

ASJC Scopus subject areas

  • 放射線
  • 凝縮系物理学
  • 電子工学および電気工学

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