High-power, high-efficiency cell design for 26 GHz HBT power amplifier

S. Tanaka, S. Murakami, Y. Amamiya, H. Shimawaki, N. Furuhata, N. Goto, K. Honjo, Y. Ishida, Y. Saito, K. Yamamoto, M. Yajima, R. Temino, Y. Hisada

研究成果: Conference article

6 引用 (Scopus)

抜粋

We describe a 6-chip combination HBT power amplifier and a single-cell chip with excellent power-added efficiency (PAE) and power density at 24-26 GHz. The power amplifier, based on our conventional chip design, exhibited 2.2 W output power with 19% PAE and 5 dB linear gain. To further improve the efficiency and power-density, various types of HBT cells were characterized. The optimum cell (184 μm2) exhibited 740 mW output power equivalent to power density of 4.0 mW/μm2, while a record high PAE of 42% was obtained. These results compare well with the best data reported at lower frequency bands (<18 GHz), thereby showing great potential for high-power, high-efficiency HBTs in near mmWave bands.

元の言語English
ページ(範囲)843-846
ページ数4
ジャーナルIEEE MTT-S International Microwave Symposium Digest
2
出版物ステータスPublished - 1996 1 1
イベントProceedings of the 1996 IEEE MTT-S International Microwave Symposium Digest. Part 1 (of 3) - San Franscisco, CA, USA
継続期間: 1996 6 171996 6 21

    フィンガープリント

ASJC Scopus subject areas

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

これを引用

Tanaka, S., Murakami, S., Amamiya, Y., Shimawaki, H., Furuhata, N., Goto, N., Honjo, K., Ishida, Y., Saito, Y., Yamamoto, K., Yajima, M., Temino, R., & Hisada, Y. (1996). High-power, high-efficiency cell design for 26 GHz HBT power amplifier. IEEE MTT-S International Microwave Symposium Digest, 2, 843-846.