High-Quality AlGaN/GaN HEMTs on Epitaxial AlN/Sapphire Templates

Masahiro Sakai, Kenta Asano, Subramaniam Arulkumaran, Hiroyasu Ishikawa, Takashi Egawa, Takashi Jimbo, Tomohiko Shibata, Mitsuhiro Tanaka, Osamu Oda

研究成果: Article査読

1 被引用数 (Scopus)

抄録

We have demonstrated AlGaN/GaN high electron mobility transistors (HEMTs) grown on epitaxial AlN/sapphire templates. The crystal qualities and fabricated device performances between AlGaN/GaN HEMTs on epitaxial AlN/sapphire templates and conventional AlGaN/GaN HEMTs on sapphire substrates with low-temperature buffer layer (LTBLs) are compared with each other. By using epitaxial AlN/sapphire templates instead of LT-BLs, higher mobility was exhibited and superior crystal qualities were observed, as confirmed by X-ray diffraction (XRD), atomic force microscopy (AFM) images and capacitance-voltage measurements. In addition, the dc characteristics of the fabricated devices on epitaxial AlN/sapphire templates were enhanced. AlGaN/GaN HEMTs on epitaxial AlN/sapphire templates are promising candidates for practical applications of nitride-based electronic devices.

本文言語English
ページ(範囲)2071-2076
ページ数6
ジャーナルIEICE Transactions on Electronics
E86-C
10
出版ステータスPublished - 2003 10
外部発表はい

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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