We have demonstrated AlGaN/GaN high electron mobility transistors (HEMTs) grown on epitaxial AlN/sapphire templates. The crystal qualities and fabricated device performances between AlGaN/GaN HEMTs on epitaxial AlN/sapphire templates and conventional AlGaN/GaN HEMTs on sapphire substrates with low-temperature buffer layer (LTBLs) are compared with each other. By using epitaxial AlN/sapphire templates instead of LT-BLs, higher mobility was exhibited and superior crystal qualities were observed, as confirmed by X-ray diffraction (XRD), atomic force microscopy (AFM) images and capacitance-voltage measurements. In addition, the dc characteristics of the fabricated devices on epitaxial AlN/sapphire templates were enhanced. AlGaN/GaN HEMTs on epitaxial AlN/sapphire templates are promising candidates for practical applications of nitride-based electronic devices.
|ジャーナル||IEICE Transactions on Electronics|
|出版ステータス||Published - 2003 10月|
ASJC Scopus subject areas