High-quality GaN on Si substrate using AlGaN/AlN intermediate layer

H. Ishikawa, G. Y. Zhao, N. Nakada, T. Egawa, T. Soga, T. Jimbo, M. Umeno

研究成果: Conference article査読

71 被引用数 (Scopus)

抄録

A single crystal GaN thin film was successfully grown on a Si(111) substrate by means of atmospheric-pressure metalorganic chemical vapor deposition. An intermediate layer consisting of AlN and AlGaN improved the quality of GaN on Si with a mirror-like surface and reduced the pits and cracks over the surface. The full width at half maximum (FWHM) of the double-crystal X-ray rocking curve for GAN(0004) was 600 arcsec. Photoluminescence measurement at 4.2 K for a non-doped film revealed a sharp band-edge emission with a FWHM of 8.8 meV, which is the narrowest value reported to date. GaInN multi-quantum-well structure was grown on this structure and showed a strong blue emission peaking at 470 nm. The results suggest GaN on Si with an AlGaN/AlN intermediate layer provides reliable light emitting devices on Si substrate.

本文言語English
ページ(範囲)599-603
ページ数5
ジャーナルPhysica Status Solidi (A) Applied Research
176
1
DOI
出版ステータスPublished - 1999 11月 1
外部発表はい
イベントProceedings of the 1999 3rd International Conference on Nitride Semiconductors (ICNS'99) - Montpellier, France
継続期間: 1999 7月 41999 7月 9

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

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