High-Quality InGaN Light Emitting Diode Grown on GaN/AlGaN Distributed Bragg Reflector

N. Nakada, M. Nakaji, H. Ishikawa, T. Egawa, T. Jimbo, M. Umeno

研究成果: Article

元の言語English
ページ(範囲)C-6-4
ジャーナルDefault journal
出版物ステータスPublished - 1999 9 1

これを引用

Nakada, N., Nakaji, M., Ishikawa, H., Egawa, T., Jimbo, T., & Umeno, M. (1999). High-Quality InGaN Light Emitting Diode Grown on GaN/AlGaN Distributed Bragg Reflector. Default journal, C-6-4.

High-Quality InGaN Light Emitting Diode Grown on GaN/AlGaN Distributed Bragg Reflector. / Nakada, N.; Nakaji, M.; Ishikawa, H.; Egawa, T.; Jimbo, T.; Umeno, M.

:: Default journal, 01.09.1999, p. C-6-4.

研究成果: Article

Nakada, N. ; Nakaji, M. ; Ishikawa, H. ; Egawa, T. ; Jimbo, T. ; Umeno, M. / High-Quality InGaN Light Emitting Diode Grown on GaN/AlGaN Distributed Bragg Reflector. :: Default journal. 1999 ; pp. C-6-4.
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AU - Nakada, N.

AU - Nakaji, M.

AU - Ishikawa, H.

AU - Egawa, T.

AU - Jimbo, T.

AU - Umeno, M.

PY - 1999/9/1

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