High-quality quaternary AlInGaN epilayers on sapphire

Yang Liu, Takashi Egawa, Hiroyasu Ishikawa, Takashi Jimbo

研究成果: Article

13 引用 (Scopus)

抄録

Quaternary AlInGaN epilayers were grown on sapphire substrates by atmospheric pressure metalorganic chemical vapour deposition (MOCVD). The characterization data indicate that the grown quaternary AlInGaN epilayers are of high-quality. The influence of indium incorporation on the properties of quaternary epilayers were studied. The PL spectra of the quaternary layers showed narrow full-width at half-maximum (FWHM) values (52 meV) at room temperature, which are comparable to that of GaN. The X-ray rocking curves of quaternary layers for (0004) diffraction exhibited narrow FWHM values ranged from 250 to 280 arcsec. To the best of our knowledge, these are the best results among those published in the literature.

元の言語English
ページ(範囲)36-39
ページ数4
ジャーナルPhysica Status Solidi (A) Applied Research
200
発行部数1
DOI
出版物ステータスPublished - 2003 11
外部発表Yes

Fingerprint

Aluminum Oxide
Epilayers
Sapphire
sapphire
Full width at half maximum
metalorganic chemical vapor deposition
indium
atmospheric pressure
Indium
Metallorganic chemical vapor deposition
Atmospheric pressure
room temperature
curves
Diffraction
diffraction
X rays
x rays
Substrates
Temperature

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

これを引用

High-quality quaternary AlInGaN epilayers on sapphire. / Liu, Yang; Egawa, Takashi; Ishikawa, Hiroyasu; Jimbo, Takashi.

:: Physica Status Solidi (A) Applied Research, 巻 200, 番号 1, 11.2003, p. 36-39.

研究成果: Article

Liu, Yang ; Egawa, Takashi ; Ishikawa, Hiroyasu ; Jimbo, Takashi. / High-quality quaternary AlInGaN epilayers on sapphire. :: Physica Status Solidi (A) Applied Research. 2003 ; 巻 200, 番号 1. pp. 36-39.
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