High reliability Cu interconnection utilizing a low contamination CoWP capping layer

T. Ishigami, T. Kurokawa, Y. Kakuhara, B. Withers, J. Jacobs, A. Kolics, I. Ivanov, M. Sekine, K. Ueno

研究成果: Conference contribution

16 引用 (Scopus)

抜粋

Copper (Cu) damascene interconnects with a cobalt tungsten phosphorus (CoWP) capping layer were developed using an alkaline-metal-free electroless plating process without palladium (Pd) catalyst activation. The wafer contamination level after processing is consistent with requirements for present LSI fabrication lines. Within wafer CoWP deposition uniformity is high and interconnects wire resistance increases by less than 5% after deposition. Electromigration (EM) testing shows no failures after two thousand hours and stress induced voiding (SIV) testing shows no failures after three thousand hours. This EM result is a 2 order of magnitude improvement over a non CoWP process.

元の言語English
ホスト出版物のタイトルProceedings of the IEEE 2004 International Interconnect Technology Conference
ページ75-77
ページ数3
出版物ステータスPublished - 2004 11 25
外部発表Yes
イベントProceedings of the IEEE 2004 International Interconnect Technology Conference - Burlingame, CA, United States
継続期間: 2004 6 72004 6 9

出版物シリーズ

名前Proceedings of the IEEE 2004 International Interconnect Technology Conference

Conference

ConferenceProceedings of the IEEE 2004 International Interconnect Technology Conference
United States
Burlingame, CA
期間04/6/704/6/9

ASJC Scopus subject areas

  • Engineering(all)

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  • これを引用

    Ishigami, T., Kurokawa, T., Kakuhara, Y., Withers, B., Jacobs, J., Kolics, A., Ivanov, I., Sekine, M., & Ueno, K. (2004). High reliability Cu interconnection utilizing a low contamination CoWP capping layer. : Proceedings of the IEEE 2004 International Interconnect Technology Conference (pp. 75-77). (Proceedings of the IEEE 2004 International Interconnect Technology Conference).