High-temperature effects of AlGaN/GaN high-electron-mobility transistors on sapphire and semi-insulating SiC substrates

S. Arulkumaran, T. Egawa, Hiroyasu Ishikawa, T. Jimbo

研究成果: Article

76 引用 (Scopus)

抄録

The high-electron-mobility transistors (HEMTs) have been demonstrated on both sapphire and semi-insulating (SI) SiC substrates, and the dc characteristics of the fabricated devices were examined at temperatures ranging from 25 to 500°C. The decrease in drain current and the transconductance with the increase of temperature have been observed. The decrease ratio of transconductance and drain current was similar for both the HEMTs on sapphire and SI-SiC substrates at and above 300°C. The HEMTs on SiC substrates showed better dc characteristics after being subjected to thermal stress up to 500°C. Although the SiC-based HEMTs showed better characteristics up to the temperature of 300°C, compared with the sapphire-based HEMTs, similar dc characteristics were observed on both at and above 300°C. For high-temperature applications (≥300°C), additional cooling arrangements are essential for both devices.

元の言語English
ページ(範囲)2186-2188
ページ数3
ジャーナルApplied Physics Letters
80
発行部数12
DOI
出版物ステータスPublished - 2002 3 25
外部発表Yes

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high electron mobility transistors
temperature effects
sapphire
transconductance
thermal stresses
temperature
cooling

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

これを引用

High-temperature effects of AlGaN/GaN high-electron-mobility transistors on sapphire and semi-insulating SiC substrates. / Arulkumaran, S.; Egawa, T.; Ishikawa, Hiroyasu; Jimbo, T.

:: Applied Physics Letters, 巻 80, 番号 12, 25.03.2002, p. 2186-2188.

研究成果: Article

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