High-temperature-grown quaternary AlInGaN epilayers and multiple quantum wells for ultraviolet emission

Yang Liu, Takashi Egawa, Hiroyasu Ishikawa, Hao Jiang, Baijun Zhang, Maosheng Hao, Takashi Jimbo

研究成果: Article査読

18 被引用数 (Scopus)

抄録

Photoluminescence (PL) studies were carried out on AlInGaN epilayers grown at different temperatures. An abnormal broad peak, which enhanced with the increase of Al incorporation, was observed below the band gap energy of AlInGaN in the 77 K PL measurement. We assigned it to the non-optimum growth temperature for aluminum containing alloys since such emission can be suppressed at higher growth temperature. Thus, high temperature (HT) was proposed for AlInGaN growth. The quality of HT-grown quaternary AlInGaN alloys was superior to that of low-temperature-grown ones, their structural and optical properties are comparable to that of GaN. In addition, incorporating indium is also helpful to suppress this abnormal emission, which maybe due to the indium localization effect. Finally, high performance AlInGaN MQWs structure had also been demonstrated at a higher growth temperature.

本文言語English
ページ(範囲)159-164
ページ数6
ジャーナルJournal of Crystal Growth
264
1-3
DOI
出版ステータスPublished - 2004 3月 15
外部発表はい

ASJC Scopus subject areas

  • 凝縮系物理学
  • 無機化学
  • 材料化学

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