High temperature oxidation of sic powder in oxidizing atmosphere containing water vapor

Takaya Akashi, Miho Kasajima, Chiharu Muraoka, Hajime Kiyono

研究成果: Article査読

1 被引用数 (Scopus)

抄録

Oxidation of SiC powder was studied at 1373 K to 1873 K in Ar-O 2, Ar-H2O, and Ar-O2-H2O using thermogravimetry. At 1373 K to 1573K, the weight gain increased with increasing water vapor pressure. The oxidation rate was evaluated on the basis of the Ginstering-Brounshtein kinetic model. In this temperature region, the apparent activation energy for the oxidation was almost the same (139-191 kJmol -1) independent of the atmosphere, suggesting that the same oxidation process proceeds. On the other hand, at temperatures >1673 K, the weight gain in the dry O2 (Ar-O2) was greater than that in the wet and wet O2 (Ar-H2O and Ar-O2-H 2O). The apparent activation energy in the dry O2 (442 kJmol-1) was much greater than that in the wet and wet O2. We propose that water molecule diffused in silica layer in the wet and wet O2 atmosphere at 1373 K to 1873 K.

本文言語English
ページ(範囲)197-200
ページ数4
ジャーナルKey Engineering Materials
403
DOI
出版ステータスPublished - 2009 2 2
外部発表はい

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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