High transconductance AlGaN/GaN-HEMT with recessed gate on sapphire substrate

Hideyuki Okita, Katsuaki Kaifu, Juro Mita, Tomoyuki Yamada, Yoshiaki Sano, Hiroyasu Ishikawa, Takashi Egawa, Takashi Jimbo

研究成果: Article査読

22 被引用数 (Scopus)

抄録

Recessed gate AlGaN/GaN high electron mobility transistors (HEMTs) grown on sapphire substrate have been fabricated. In order to improve FET performances, we optimized the layer structure and the electrode arrangement of the HEMT, and hence 0.15 μm gate-length AlGaN/GaN-HEMTs with recessed gate were successfully fabricated and the obtained transconductance was as high as 450 mS/mm. In this paper we describe the improvement of HEMT layer structures on sapphire substrate, the optimisation of an offset arrangement of gate electrodes, and the results of DC/RF measurements of our HEMTs.

本文言語English
ページ(範囲)187-190
ページ数4
ジャーナルPhysica Status Solidi (A) Applied Research
200
1
DOI
出版ステータスPublished - 2003 11
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

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