@inproceedings{770fbce5823b4607a29e730c48e71477,
title = "HIGH TRANSCONDUCTANCE GaAs MESFETs FABRICATED USING SIDEWALL-ASSISTED SELF-ALIGNMENT TECHNOLOGY (SWAT).",
author = "K. Ueno and T. Furutsuka and M. Kanamori and A. Higashisaka",
year = "1985",
doi = "10.7567/ssdm.1985.b-5-2",
language = "English",
isbn = "4930813107",
series = "Conference on Solid State Devices and Materials",
publisher = "Japan Soc of Applied Physics",
pages = "405--408",
booktitle = "Conference on Solid State Devices and Materials",
}