抄録
The authors report the fabrication of p-channel modulation-doped AlGaAs-GaAs heterostructure FETs (p-HFETs) using two-dimensional hole gas (2DHG) under various geometrical device parameter conditions. The p-HFET characteristics were measured at 300 and 77 K for the following three device-parameter ranges: the gate length L//g (1-320 mu m), the gate-source distance L//g //s (0. 5-5 mu m), and the layer thickness d//t (35-58 nm) of AlGaAs beneath the gate. Based on the obtained results, a high-performance enhancement-mode p-HFET was fabricated with the following parameters: L//g equals 1 mu m, L//g //s equals 0. 5 mu m, and d//t equals 35 nm. The achieved extrinsic transconductance g//m was 75 mS/mm at 77 K. This experimental result indicates that a g//m greater than 200 mS/mm at 77 K can be obtained in 1- mu m gate p-HFET devices.
| 元の言語 | English |
|---|---|
| ページ（範囲） | 620-624 |
| ページ数 | 5 |
| ジャーナル | IEEE Transactions on Electron Devices |
| 巻 | ED-33 |
| 発行部数 | 5 |
| 出版物ステータス | Published - 1986 3 |
| 外部発表 | Yes |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Physics and Astronomy (miscellaneous)
これを引用
HIGH-TRANSCONDUCTANCE P-CHANNEL MODULATION-DOPED AlGaAs/GaAs HETEROSTRUCTURE FET'S. / Hirano, Makoto; Oe, Kunishige; Yanagawa, Fumihiko.
：: IEEE Transactions on Electron Devices, 巻 ED-33, 番号 5, 03.1986, p. 620-624.研究成果: Article
}
TY - JOUR
T1 - HIGH-TRANSCONDUCTANCE P-CHANNEL MODULATION-DOPED AlGaAs/GaAs HETEROSTRUCTURE FET'S.
AU - Hirano, Makoto
AU - Oe, Kunishige
AU - Yanagawa, Fumihiko
PY - 1986/3
Y1 - 1986/3
N2 - The authors report the fabrication of p-channel modulation-doped AlGaAs-GaAs heterostructure FETs (p-HFETs) using two-dimensional hole gas (2DHG) under various geometrical device parameter conditions. The p-HFET characteristics were measured at 300 and 77 K for the following three device-parameter ranges: the gate length L//g (1-320 mu m), the gate-source distance L//g //s (0. 5-5 mu m), and the layer thickness d//t (35-58 nm) of AlGaAs beneath the gate. Based on the obtained results, a high-performance enhancement-mode p-HFET was fabricated with the following parameters: L//g equals 1 mu m, L//g //s equals 0. 5 mu m, and d//t equals 35 nm. The achieved extrinsic transconductance g//m was 75 mS/mm at 77 K. This experimental result indicates that a g//m greater than 200 mS/mm at 77 K can be obtained in 1- mu m gate p-HFET devices.
AB - The authors report the fabrication of p-channel modulation-doped AlGaAs-GaAs heterostructure FETs (p-HFETs) using two-dimensional hole gas (2DHG) under various geometrical device parameter conditions. The p-HFET characteristics were measured at 300 and 77 K for the following three device-parameter ranges: the gate length L//g (1-320 mu m), the gate-source distance L//g //s (0. 5-5 mu m), and the layer thickness d//t (35-58 nm) of AlGaAs beneath the gate. Based on the obtained results, a high-performance enhancement-mode p-HFET was fabricated with the following parameters: L//g equals 1 mu m, L//g //s equals 0. 5 mu m, and d//t equals 35 nm. The achieved extrinsic transconductance g//m was 75 mS/mm at 77 K. This experimental result indicates that a g//m greater than 200 mS/mm at 77 K can be obtained in 1- mu m gate p-HFET devices.
UR - http://www.scopus.com/inward/record.url?scp=0022683134&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0022683134&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0022683134
VL - ED-33
SP - 620
EP - 624
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
SN - 0018-9383
IS - 5
ER -