Highly integrated 3-D MMIC technology being applied to novel masterslice GaAs- and Si-MMIC's

Tsuneo Tokumitsu, Makoto Hirano, Kimiyoshi Yamasaki, Chikara Yamaguchi, Masayoshi Aikawa

    研究成果: Paper

    9 引用 (Scopus)

    抜粋

    A novel masterslice MMIC design approach employing a 3-D MMIC structure is described using a highly-integrated 17-24 GHz GaAs single-chip receiver and a 7-10 GHz Si reactive-impedance-matching amplifier, which are the most recent devices fabricated with our process. This approach considerably reduces TAT and manufacturing costs.

    元の言語English
    ページ151-154
    ページ数4
    出版物ステータスPublished - 1996 12 1
    イベントProceedings of the 1996 18th Annual IEEE Gallium Arsenide Integrated Circuit Symposium - Orlando, FL, USA
    継続期間: 1996 11 31996 11 6

    Other

    OtherProceedings of the 1996 18th Annual IEEE Gallium Arsenide Integrated Circuit Symposium
    Orlando, FL, USA
    期間96/11/396/11/6

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering

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  • これを引用

    Tokumitsu, T., Hirano, M., Yamasaki, K., Yamaguchi, C., & Aikawa, M. (1996). Highly integrated 3-D MMIC technology being applied to novel masterslice GaAs- and Si-MMIC's. 151-154. 論文発表場所 Proceedings of the 1996 18th Annual IEEE Gallium Arsenide Integrated Circuit Symposium, Orlando, FL, USA, .