A highly-integrated, three-dimensional 20-GHz band single chip receiver employing four thin polyimide films on a GaAs wafer is presented. The fabricated receiver implements three RF variable-gain amplifiers, an image rejectlon mixer, two LO amplifiers, and a voltage controlled oscillatorin an areaof only 1.78 mm × 1.78 mm. The performances of the demonstrated receiver are a 17dB gain and an integration level about three times as high as those of conventional receiver MMICs. The design methodologies used to achieve compact RF circuits on a single chip are also described.
|出版ステータス||Published - 1996 1 1|
|イベント||1996 26th European Microwave Conference, EuMC 1996 - Prague, Czech Republic|
継続期間: 1996 9 6 → 1996 9 13
|Conference||1996 26th European Microwave Conference, EuMC 1996|
|Period||96/9/6 → 96/9/13|
ASJC Scopus subject areas
- コンピュータ ネットワークおよび通信