Highly-integrated three-dimensional MMIC 20-GHz single chip receiver

Kenjiro Nishikawa; Kenji Kamogawa; Tsuneo Tokumitsu; Masayoshi Aikawa; Makoto Hirano; Suehiro Sugitani

doi:10.1109/EUMA.1996.337552

Highly-integrated three-dimensional MMIC 20-GHz single chip receiver

Kenjiro Nishikawa, Kenji Kamogawa, Tsuneo Tokumitsu, Masayoshi Aikawa, Makoto Hirano, Suehiro Sugitani

研究成果: Paper › 査読

8 被引用数 (Scopus)

抄録

A highly-integrated, three-dimensional 20-GHz band single chip receiver employing four thin polyimide films on a GaAs wafer is presented. The fabricated receiver implements three RF variable-gain amplifiers, an image rejectlon mixer, two LO amplifiers, and a voltage controlled oscillatorin an areaof only 1.78 mm × 1.78 mm. The performances of the demonstrated receiver are a 17dB gain and an integration level about three times as high as those of conventional receiver MMICs. The design methodologies used to achieve compact RF circuits on a single chip are also described.

本文言語	English
ページ	199-203
ページ数	5
DOI	https://doi.org/10.1109/EUMA.1996.337552
出版ステータス	Published - 1996 1月 1
イベント	1996 26th European Microwave Conference, EuMC 1996 - Prague, Czech Republic 継続期間: 1996 9月 6 → 1996 9月 13

Conference

Conference	1996 26th European Microwave Conference, EuMC 1996
国/地域	Czech Republic
City	Prague
Period	96/9/6 → 96/9/13

ASJC Scopus subject areas

コンピュータネットワークおよび通信
ハードウェアとアーキテクチャ
電子工学および電気工学

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10.1109/EUMA.1996.337552

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引用スタイル

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AU - Nishikawa, Kenjiro

AU - Kamogawa, Kenji

AU - Tokumitsu, Tsuneo

AU - Aikawa, Masayoshi

AU - Hirano, Makoto

AU - Sugitani, Suehiro

PY - 1996/1/1

Y1 - 1996/1/1

N2 - A highly-integrated, three-dimensional 20-GHz band single chip receiver employing four thin polyimide films on a GaAs wafer is presented. The fabricated receiver implements three RF variable-gain amplifiers, an image rejectlon mixer, two LO amplifiers, and a voltage controlled oscillatorin an areaof only 1.78 mm × 1.78 mm. The performances of the demonstrated receiver are a 17dB gain and an integration level about three times as high as those of conventional receiver MMICs. The design methodologies used to achieve compact RF circuits on a single chip are also described.

AB - A highly-integrated, three-dimensional 20-GHz band single chip receiver employing four thin polyimide films on a GaAs wafer is presented. The fabricated receiver implements three RF variable-gain amplifiers, an image rejectlon mixer, two LO amplifiers, and a voltage controlled oscillatorin an areaof only 1.78 mm × 1.78 mm. The performances of the demonstrated receiver are a 17dB gain and an integration level about three times as high as those of conventional receiver MMICs. The design methodologies used to achieve compact RF circuits on a single chip are also described.

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T2 - 1996 26th European Microwave Conference, EuMC 1996

Y2 - 6 September 1996 through 13 September 1996

ER -

Highly-integrated three-dimensional MMIC 20-GHz single chip receiver

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