Highly resistive GaN layers formed by ion implantation of Zn along the c axis

Toshiyuki Oishi, Naruhisa Miura, Muneyoshi Suita, Takuma Nanjo, Yuji Abe, Tatsuo Ozeki, Hiroyasu Ishikawa, Takashi Egawa, Takashi Jimbo

研究成果: Article査読

44 被引用数 (Scopus)

抄録

The formation of a highly resistive layer using heavy ion implantation was reported. It was confirmed that a heavy ion such as Zn was able to produce damage-related defects by Monte Carlo simulation. Zn above the concentration of 1017 cm-3 was distributed through a GaN layer of 1700 nm thick, when ions were implanted by the condition where the ion energy and dose concentration were 350 keV and 1.9×1014 cm-2, respectively.

本文言語English
ページ(範囲)1662-1666
ページ数5
ジャーナルJournal of Applied Physics
94
3
DOI
出版ステータスPublished - 2003 8月 1
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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