Improved characteristics of blue and green InGaN-based light-emitting diodes on Si grown by metalorganic chemical vapor deposition

Takashi Egawa, Tetsuji Moku, Hiroyasu Ishikawa, Kouji Ohtsuka, Takashi Jimbo

研究成果: Letter査読

105 被引用数 (Scopus)

抄録

We report significantly improved characteristics of InGaN multiple-quantum well blue and green light-emitting diodes (LEDs) on Si (111) substrates using metalorganic chemical vapor deposition. A high-temperature-grown thin AlN layer and AlN/GaN multilayers have been used for the growth of high-quality active layer on Si substrate. The blue LED on Si exhibited an operating voltage of 4.1 V, a series resistance of 30 Ω, an optical output power of 18 μW and a peak emission wavelength of 478 nm with a full width at half maximum of 22 nm at 20 mA drive current. These characteristics are comparable to those of LED on sapphire substrate. The green LED was also fabricated on Si substrate successfully.

本文言語English
ページ(範囲)L663-L664
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
41
6 B
DOI
出版ステータスPublished - 2002 6 15
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(その他)
  • 物理学および天文学(全般)

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