Improved heat treatment for wafer direct bonding between semiconductors and magnetic garnets

Hideki Yokoi; Tetsuya Mizumoto; Koichi Maru; Yoshiyuki Naito

Improved heat treatment for wafer direct bonding between semiconductors and magnetic garnets

Hideki Yokoi, Tetsuya Mizumoto, Koichi Maru, Yoshiyuki Naito

研究成果: Article › 査読

抄録

The optical propagation loss of rib waveguides fabricated on magnetic garnet films increased upon annealing in H₂ ambient during wafer direct bonding. The heat treatment in wafer direct bonding between InP and Gd₃Ga₅O₁₂ was investigated with the aim of circumventing the loss increase. The bonding was achieved by heat treatment in H₂ ambient at temperatures of ≦ 330°C or in N₂ ambient.

本文言語	English
ページ（範囲）	2784-2787
ページ数	4
ジャーナル	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
巻	36
号	5 A
出版ステータス	Published - 1997 5 1
外部発表	はい

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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引用スタイル

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abstract = "The optical propagation loss of rib waveguides fabricated on magnetic garnet films increased upon annealing in H2 ambient during wafer direct bonding. The heat treatment in wafer direct bonding between InP and Gd3Ga5O12 was investigated with the aim of circumventing the loss increase. The bonding was achieved by heat treatment in H2 ambient at temperatures of ≦ 330°C or in N2 ambient.",

keywords = "Absorption loss, Garnets, Wafer direct bonding, X-ray photoelectron spectroscopy rib waveguide",

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AU - Mizumoto, Tetsuya

AU - Maru, Koichi

AU - Naito, Yoshiyuki

PY - 1997/5/1

Y1 - 1997/5/1

N2 - The optical propagation loss of rib waveguides fabricated on magnetic garnet films increased upon annealing in H2 ambient during wafer direct bonding. The heat treatment in wafer direct bonding between InP and Gd3Ga5O12 was investigated with the aim of circumventing the loss increase. The bonding was achieved by heat treatment in H2 ambient at temperatures of ≦ 330°C or in N2 ambient.

AB - The optical propagation loss of rib waveguides fabricated on magnetic garnet films increased upon annealing in H2 ambient during wafer direct bonding. The heat treatment in wafer direct bonding between InP and Gd3Ga5O12 was investigated with the aim of circumventing the loss increase. The bonding was achieved by heat treatment in H2 ambient at temperatures of ≦ 330°C or in N2 ambient.

KW - Absorption loss

KW - Garnets

KW - Wafer direct bonding

KW - X-ray photoelectron spectroscopy rib waveguide

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

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