Improved MOCVD growth of GaN on Si-on-porous-silicon substrates

H. Ishikawa, K. Shimanaka, M. Azfar Bin M. Amir, Y. Hara, M. Nakanishi

研究成果: Conference article査読

9 被引用数 (Scopus)

抄録

The mechanism of the poor surface morphology of MOCVD-grown GaN on porous Si (PSi) substrates was explored. Transmission electron microscopy suggests that a vacancy growth of pores starts, which is accompanied by the migration of the top surface of the PSi layer during the initial growth stage of GaN on the AlN inter layer. This causes a lot of pits on top GaN and wavy interface between GaN of the PSi layer, deteriorating the poor surface morphology. The epitaxial Si layer on PSi is effective in suppressing the migration of the top surface of the PSi layer. The GaN film on the epitaxial-Si/PSi shows a mirror surface with pits-free and very few cracks. No voids at the interface between the AlN IL and Si/PSi substrate are observed.

本文言語English
ページ(範囲)2049-2051
ページ数3
ジャーナルPhysica Status Solidi (C) Current Topics in Solid State Physics
7
7-8
DOI
出版ステータスPublished - 2010 8 26
イベント8th International Conference on Nitride Semiconductors, ICNS-8 - Jeju, Korea, Republic of
継続期間: 2009 10 182009 10 23

ASJC Scopus subject areas

  • Condensed Matter Physics

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