Improvement of critical current density in MgB2 by Ti, Zr and Hf doping

D. Goto, T. Machi, Y. Zhao, N. Koshizuka, M. Murakami, S. Arai

研究成果査読

46 被引用数 (Scopus)

抄録

Ti, Zr and Hf doped MgB2 polycrystalline samples have been prepared by using a hot pressing technique. In Ti doped MgB2, it was found that the optimum concentration of Ti for the critical current density Jc was 5% and Jc value was improved from 1.9×10 5 A/cm2 (Ti 0%) to 5.6×105 A/cm 2 (Ti 5%) in self-field at 10 K. Jc values were also improved to 5.0×105 A/cm2 with 2% Zr doping and to 4.8×105 A/cm2 with 1% Hf doping. We found that the improvement of the irreversibility field Birr with Zr and Hf doping was larger than that of Ti doping.

本文言語English
ページ(範囲)272-275
ページ数4
ジャーナルPhysica C: Superconductivity and its applications
392-396
PART 1
DOI
出版ステータスPublished - 2003 10
外部発表はい
イベントProceedings of the 15th International Symposium on Superconduc - Yokohama, Japan
継続期間: 2002 11 112002 11 13

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • エネルギー工学および電力技術
  • 電子工学および電気工学

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