TY - JOUR
T1 - In-plane mobility anisotropy and universality under uni-axial strains in n- and p-MOS inversion layers on (100), (110), and (111) Si
AU - Irie, H.
AU - Kita, K.
AU - Kyuno, K.
AU - Toriumi, A.
N1 - Funding Information:
We are grateful to J.Koga, S.Saito, Y.Harada, Y.Sugiyama and S.Nishikawa in STARC (Semiconductor Technology Academic Research Center) for intensive discussions.
PY - 2004
Y1 - 2004
N2 - An investigation of the inversion layer mobility characteristics on conditions with systematic combinations of three key parameters: surface orientations, in-plane channel directions, and uni-axial strains, was performed. A guiding principle for an optimum combination of above three key parameters in terms of electron and hole mobility enhancement is presented. In addition, it is found experimentally that the definition of the mobility universality should be changed with surface orientations and applied uni-axial strains.
AB - An investigation of the inversion layer mobility characteristics on conditions with systematic combinations of three key parameters: surface orientations, in-plane channel directions, and uni-axial strains, was performed. A guiding principle for an optimum combination of above three key parameters in terms of electron and hole mobility enhancement is presented. In addition, it is found experimentally that the definition of the mobility universality should be changed with surface orientations and applied uni-axial strains.
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M3 - Conference article
AN - SCOPUS:21644454069
SN - 0163-1918
SP - 225
EP - 228
JO - Technical Digest - International Electron Devices Meeting
JF - Technical Digest - International Electron Devices Meeting
T2 - IEEE International Electron Devices Meeting, 2004 IEDM
Y2 - 13 December 2004 through 15 December 2004
ER -