In-plane mobility anisotropy and universality under uni-axial strains in n- and p-MOS inversion layers on (100), (110), and (111) Si

H. Irie, K. Kita, K. Kyuno, A. Toriumi

研究成果: Conference article査読

137 被引用数 (Scopus)

抄録

An investigation of the inversion layer mobility characteristics on conditions with systematic combinations of three key parameters: surface orientations, in-plane channel directions, and uni-axial strains, was performed. A guiding principle for an optimum combination of above three key parameters in terms of electron and hole mobility enhancement is presented. In addition, it is found experimentally that the definition of the mobility universality should be changed with surface orientations and applied uni-axial strains.

本文言語English
ページ(範囲)225-228
ページ数4
ジャーナルTechnical Digest - International Electron Devices Meeting, IEDM
出版ステータスPublished - 2004 12 1
イベントIEEE International Electron Devices Meeting, 2004 IEDM - San Francisco, CA, United States
継続期間: 2004 12 132004 12 15

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学
  • 材料化学

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