Influence of morphological transition on crystallization process in Si

Kazuki Watanabe, Katsuhisa Nagayama, Kazuhiko Kuribayashi

研究成果: Article査読

1 被引用数 (Scopus)

抄録

Using CO2 laser equipped electro-magnetic levitator, we carried out the crystallization of Si at undercoolings from 0 K to 200 K. From the point of the interface morphologies, the relationship between growth velocities and undercoolings was classified into two regions, I and II, respectively. In region I where the undercooling is approximately less than 100 K, thin plate crystals whose interface consists of faceted plane were observed. In region II, the morphology of growing crystals changed to massive dendrites. Although the interface morphologies in region II look quite different from that in region I, the growth velocities are expressed by two dimensional (2D) nucleation- controlled growth model, and at undercoolings larger than 150 K, the growth velocities asymptotically close to the analysis of the mono-parametric linear kinetics growth model. In this stage, the kinetic coefficient of 0.1 m/sK is equivalent with that derived by the diffusion-controlled growth model. This result means that with increase of undercooling, the rate-determining factor changes from 2D nucleation on the faceted interface to random incorporation of atoms on the rough interface.

本文言語English
ページ(範囲)188-192
ページ数5
ジャーナルNippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals
75
3
DOI
出版ステータスPublished - 2011 3

ASJC Scopus subject areas

  • 凝縮系物理学
  • 材料力学
  • 金属および合金
  • 材料化学

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