Influence of post-deposition annealing on interface characteristics at Al2O3/n-GaN

Kazuya Yuge, Toshihide Nabatame, Yoshihiro Irokawa, Akihiko Ohi, Naoki Ikeda, Akira Uedono, Liwen Sang, Yasuo Koide, Tomoji Ohishi

研究成果: Conference contribution

抄録

We investigated the influence of post-deposition annealing (PDA) on interface characteristics of Al2O3/n-GaN capacitors in shallow (around Ec) and deep (around Ev) band regions. Interface state density (Dit) estimated by conductance method increased in shallow band region at Al2O3/n-GaN interface after PDA at 900°C. In contrast, another Dit estimated by photo-assisted C-V measurement was improved in deep band region and the interface fixed charge estimated from Vfb shift also decreased after PDA at 900°C.

本文言語English
ホスト出版物のタイトル2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
出版社Institute of Electrical and Electronics Engineers Inc.
ページ368-370
ページ数3
ISBN(電子版)9781538665084
DOI
出版ステータスPublished - 2019 3
イベント2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 - Singapore, Singapore
継続期間: 2019 3 122019 3 15

出版物シリーズ

名前2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019

Conference

Conference2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
国/地域Singapore
CitySingapore
Period19/3/1219/3/15

ASJC Scopus subject areas

  • 電子工学および電気工学
  • 電子材料、光学材料、および磁性材料
  • 器械工学
  • ハードウェアとアーキテクチャ

フィンガープリント

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