Influence of post-deposition annealing on interface characteristics at Al2O3/n-GaN

Kazuya Yuge, Toshihide Nabatame, Yoshihiro Irokawa, Akihiko Ohi, Naoki Ikeda, Akira Uedono, Liwen Sang, Yasuo Koide, Tomoji Ohishi

研究成果: Conference contribution

抜粋

We investigated the influence of post-deposition annealing (PDA) on interface characteristics of Al2O3/n-GaN capacitors in shallow (around Ec) and deep (around Ev) band regions. Interface state density (Dit) estimated by conductance method increased in shallow band region at Al2O3/n-GaN interface after PDA at 900°C. In contrast, another Dit estimated by photo-assisted C-V measurement was improved in deep band region and the interface fixed charge estimated from Vfb shift also decreased after PDA at 900°C.

元の言語English
ホスト出版物のタイトル2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
出版者Institute of Electrical and Electronics Engineers Inc.
ページ368-370
ページ数3
ISBN(電子版)9781538665084
DOI
出版物ステータスPublished - 2019 3
イベント2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 - Singapore, Singapore
継続期間: 2019 3 122019 3 15

出版物シリーズ

名前2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019

Conference

Conference2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
Singapore
Singapore
期間19/3/1219/3/15

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Hardware and Architecture

フィンガープリント Influence of post-deposition annealing on interface characteristics at Al<sub>2</sub>O<sub>3</sub>/n-GaN' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。

  • これを引用

    Yuge, K., Nabatame, T., Irokawa, Y., Ohi, A., Ikeda, N., Uedono, A., Sang, L., Koide, Y., & Ohishi, T. (2019). Influence of post-deposition annealing on interface characteristics at Al2O3/n-GaN. : 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 (pp. 368-370). [8731166] (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM.2019.8731166