Influence of Postdeposition Cooling Atmosphere on Thermoelectric Properties of 2% Al-Doped ZnO Thin Films Grown by Pulsed Laser Deposition

S. Saini, Paolo Mele, H. Honda, K. Matsumoto, K. Miyazaki, L. Molina Luna, P. E. Hopkins

研究成果: Article

8 引用 (Scopus)

抄録

We have investigated the thermoelectric properties of 2% Al-doped ZnO (AZO) thin films depending on the postdeposition cooling atmosphere [in oxygen pressure (AZO-O) or vacuum (AZO-V)]. Thin films were grown by pulsed laser deposition on sapphire (Al2O3) substrates at various deposition temperatures (400C to 600C). All films were c-axis oriented. The electrical conductivity of AZO-V thin films was higher than that of AZO-O thin films across the whole temperature range from 300 K to 600 K, due to the optimal carrier concentration (1020cm-3) of AZO-V samples. Furthermore, the thermoelectric performance of AZO-V films increased with the deposition temperature; for instance, the highest power factor of 0.87 ×10-3Wm-1K-2 and dimensionless figure of merit of 0.07 at 600 K were found for AZO-V thin film deposited at 600C.

元の言語English
ページ(範囲)1547-1553
ページ数7
ジャーナルJournal of Electronic Materials
44
発行部数6
DOI
出版物ステータスPublished - 2015 6 1
外部発表Yes

Fingerprint

Pulsed laser deposition
pulsed laser deposition
Cooling
cooling
atmospheres
Thin films
thin films
Aluminum Oxide
Sapphire
figure of merit
Temperature
Carrier concentration
temperature
sapphire
Vacuum
Oxygen
vacuum
electrical resistivity
oxygen
Substrates

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

これを引用

Influence of Postdeposition Cooling Atmosphere on Thermoelectric Properties of 2% Al-Doped ZnO Thin Films Grown by Pulsed Laser Deposition. / Saini, S.; Mele, Paolo; Honda, H.; Matsumoto, K.; Miyazaki, K.; Luna, L. Molina; Hopkins, P. E.

:: Journal of Electronic Materials, 巻 44, 番号 6, 01.06.2015, p. 1547-1553.

研究成果: Article

Saini, S. ; Mele, Paolo ; Honda, H. ; Matsumoto, K. ; Miyazaki, K. ; Luna, L. Molina ; Hopkins, P. E. / Influence of Postdeposition Cooling Atmosphere on Thermoelectric Properties of 2% Al-Doped ZnO Thin Films Grown by Pulsed Laser Deposition. :: Journal of Electronic Materials. 2015 ; 巻 44, 番号 6. pp. 1547-1553.
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abstract = "We have investigated the thermoelectric properties of 2{\%} Al-doped ZnO (AZO) thin films depending on the postdeposition cooling atmosphere [in oxygen pressure (AZO-O) or vacuum (AZO-V)]. Thin films were grown by pulsed laser deposition on sapphire (Al2O3) substrates at various deposition temperatures (400∘C to 600∘C). All films were c-axis oriented. The electrical conductivity of AZO-V thin films was higher than that of AZO-O thin films across the whole temperature range from 300 K to 600 K, due to the optimal carrier concentration (1020cm-3) of AZO-V samples. Furthermore, the thermoelectric performance of AZO-V films increased with the deposition temperature; for instance, the highest power factor of 0.87 ×10-3Wm-1K-2 and dimensionless figure of merit of 0.07 at 600 K were found for AZO-V thin film deposited at 600∘C.",
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AU - Luna, L. Molina

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